Abstract

Metalsemiconductor field-effect transistors (MESFETs) have been fabricated using a 150-nm partially depleted silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) technology. Minimum gate lengths of 150 nm have been achieved, which represents a significant reduction compared with an earlier demonstration using a 350-nm CMOS technology. The scaled MESFETs with Lg = 150 nm have a current drive that exceeds 200 mA/mm with a peak fT 35 GHz. This is considerably higher than the Lg = 400 nm MESFET with a current drive of ∼70 mA/mm and a peak fT = 10.6 GHz, which was possible with the earlier generation. However, short-channel effects become significant for Lg < 400 nm, resulting in an optimum MESFET gate length for this technology in the range of 200300 nm.

Original languageEnglish (US)
Article number5765667
Pages (from-to)1628-1634
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number6
DOIs
StatePublished - Jun 1 2011

Keywords

  • Metalsemiconductor field-effect transistors (MESFETs)
  • Schottky junction
  • partially depleted (PD)
  • silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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