Metalsemiconductor field-effect transistors (MESFETs) have been fabricated using a 150-nm partially depleted silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) technology. Minimum gate lengths of 150 nm have been achieved, which represents a significant reduction compared with an earlier demonstration using a 350-nm CMOS technology. The scaled MESFETs with Lg = 150 nm have a current drive that exceeds 200 mA/mm with a peak fT 35 GHz. This is considerably higher than the Lg = 400 nm MESFET with a current drive of ∼70 mA/mm and a peak fT = 10.6 GHz, which was possible with the earlier generation. However, short-channel effects become significant for Lg < 400 nm, resulting in an optimum MESFET gate length for this technology in the range of 200300 nm.
- Metalsemiconductor field-effect transistors (MESFETs)
- Schottky junction
- partially depleted (PD)
- silicon-on-insulator (SOI)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering