Abstract
Ultra-submicron GaAs MESFETs have been fabricated with gate lengths ranging from 25 nm to 80 nm, using an electron-beam lithography process. The MESFETs were fabricated on vapor-phase grown wafers. The HEMT devices were fabricated on MBE grown wafers. Measurements of the transconductances of these devices, as a function of the effective gate length, exhibit transconductance degradation due to a diminishing aspect ratio. Velocity overshoot, saturation due to substrate current (MESFETs), real space transfer (HEMTs) and/or source dependent minimum acceleration lengths (both). In addition, the HEMTs with gate lengths less than 30nm exhibit exponentially dependent current. This suggests that tunneling is the dominant current mechanism and the final limit to scaling of conventional FETs has been observed.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | Murray J. Gibson, Harold G. Craighead |
Place of Publication | Bellingham, WA, United States |
Publisher | Publ by Int Soc for Optical Engineering |
Pages | 39-44 |
Number of pages | 6 |
Volume | 1284 |
ISBN (Print) | 0819403350 |
State | Published - 1990 |
Event | Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA Duration: Mar 20 1990 → Mar 21 1990 |
Other
Other | Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors |
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City | San Diego, CA, USA |
Period | 3/20/90 → 3/21/90 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics