Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs

J. M. Ryan, J. Han, A. M. Kriman, D. K. Ferry, P. Newman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Ultra-submicron GaAs MESFETs have been fabricated with gate lengths ranging from 25 nm to 80 nm, using an electron-beam lithography process. The MESFETs were fabricated on vapor-phase grown wafers. The HEMT devices were fabricated on MBE grown wafers. Measurements of the transconductances of these devices, as a function of the effective gate length, exhibit transconductance degradation due to a diminishing aspect ratio. Velocity overshoot, saturation due to substrate current (MESFETs), real space transfer (HEMTs) and/or source dependent minimum acceleration lengths (both). In addition, the HEMTs with gate lengths less than 30nm exhibit exponentially dependent current. This suggests that tunneling is the dominant current mechanism and the final limit to scaling of conventional FETs has been observed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMurray J. Gibson, Harold G. Craighead
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages39-44
Number of pages6
Volume1284
ISBN (Print)0819403350
StatePublished - 1990
EventNanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA
Duration: Mar 20 1990Mar 21 1990

Other

OtherNanostructures and Microstructure Correlation with Physical Properties of Semiconductors
CitySan Diego, CA, USA
Period3/20/903/21/90

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs'. Together they form a unique fingerprint.

Cite this