Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs

J. M. Ryan, J. Han, A. M. Kriman, D. K. Ferry, P. Newman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ultra-submicron GaAs MESFETs have been fabricated with gate lengths ranging from 25 nm to 80 nm, using an electron-beam lithography process. The MESFETs were fabricated on vapor-phase grown wafers. The HEMT devices were fabricated on MBE grown wafers. Measurements of the transconductances of these devices, as a function of the effective gate length, exhibit transconductance degradation due to a diminishing aspect ratio. Velocity overshoot, saturation due to substrate current (MESFETs), real space transfer (HEMTs) and/or source dependent minimum acceleration lengths (both). In addition, the HEMTs with gate lengths less than 30nm exhibit exponentially dependent current. This suggests that tunneling is the dominant current mechanism and the final limit to scaling of conventional FETs has been observed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMurray J. Gibson, Harold G. Craighead
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages39-44
Number of pages6
Volume1284
ISBN (Print)0819403350
StatePublished - 1990
EventNanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA
Duration: Mar 20 1990Mar 21 1990

Other

OtherNanostructures and Microstructure Correlation with Physical Properties of Semiconductors
CitySan Diego, CA, USA
Period3/20/903/21/90

Fingerprint

Transconductance
High electron mobility transistors
transconductance
high electron mobility transistors
field effect transistors
scaling
Electron beam lithography
wafers
Field effect transistors
Molecular beam epitaxy
Aspect ratio
Vapors
aspect ratio
Degradation
lithography
Substrates
electron beams
vapor phases
degradation
saturation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Ryan, J. M., Han, J., Kriman, A. M., Ferry, D. K., & Newman, P. (1990). Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs. In M. J. Gibson, & H. G. Craighead (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1284, pp. 39-44). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs. / Ryan, J. M.; Han, J.; Kriman, A. M.; Ferry, D. K.; Newman, P.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Murray J. Gibson; Harold G. Craighead. Vol. 1284 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. p. 39-44.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ryan, JM, Han, J, Kriman, AM, Ferry, DK & Newman, P 1990, Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs. in MJ Gibson & HG Craighead (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1284, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 39-44, Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors, San Diego, CA, USA, 3/20/90.
Ryan JM, Han J, Kriman AM, Ferry DK, Newman P. Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs. In Gibson MJ, Craighead HG, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1284. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1990. p. 39-44
Ryan, J. M. ; Han, J. ; Kriman, A. M. ; Ferry, D. K. ; Newman, P. / Scaling of transconductance in Ultra-submicron GaAs MESFETs and HEMTs. Proceedings of SPIE - The International Society for Optical Engineering. editor / Murray J. Gibson ; Harold G. Craighead. Vol. 1284 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. pp. 39-44
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