Scaling of gate length in ultra-short channel heterostructure field effect transistors

Jaeheon Han, David K. Ferry

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Ultra-short channel AlGaAs/GaAs modulation doped field effect transistors (MODFETs) have been fabricated with gate lengths ranging from 25 to 115 nm, using an electron beam lithography process, in order to examine the fundamental limitation of transistor scaling. For gate lengths in the tens of nanometer range, where the gradual channel approximation is no longer valid, it is observed that the transconductance is improved by electron velocity overshoot. Velocity overshoot starts to occur in our devices with sub-70 nm gate lengths, which is smaller than that expected from other published experimental results. This is due to the suppression of the velocity overshoot by a parasitic gate-fringing effect in a reduced gate aspect ratio. However, we find that the enhancement in transconductance by the velocity overshoot is limited with further scaling and the transconductance starts to drop at a gate length below 40 nm. Short-channel electron tunneling is suggested experimentally to explain the degradation of transistor performance in the shortest channel devices.

Original languageEnglish (US)
Pages (from-to)335-341
Number of pages7
JournalSolid-State Electronics
Volume43
Issue number2
StatePublished - 1999
Externally publishedYes

Fingerprint

High electron mobility transistors
Transconductance
field effect transistors
scaling
transconductance
Transistors
Electron tunneling
Electron beam lithography
transistors
Aspect ratio
electron tunneling
Degradation
aluminum gallium arsenides
Electrons
aspect ratio
lithography
retarding
electron beams
degradation
modulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Scaling of gate length in ultra-short channel heterostructure field effect transistors. / Han, Jaeheon; Ferry, David K.

In: Solid-State Electronics, Vol. 43, No. 2, 1999, p. 335-341.

Research output: Contribution to journalArticle

Han, Jaeheon ; Ferry, David K. / Scaling of gate length in ultra-short channel heterostructure field effect transistors. In: Solid-State Electronics. 1999 ; Vol. 43, No. 2. pp. 335-341.
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