Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys

S. F. Li; M. R. Bauer; Jose Menendez; John Kouvetakis

doi:10.1063/1.1645667

Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys

S. F. Li, M. R. Bauer, Jose Menendez, John Kouvetakis

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49 Scopus citations

Abstract

The compositional dependence of the Ge-Ge mode in SnGe alloys was expressed in terms of a model that incorporates the basic physics of alloy mode frequencies in group IV alloys. Simple scaling laws that relate SnGe and GeSi vibrational modes were found. The existence of such scaling confirmed that SnGe alloys behave very similarly to the well-known GeSi alloys, in spite of the extreme differences between Sn and Ge.

Original language	English (US)
Pages (from-to)	867-869
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	6
DOIs	https://doi.org/10.1063/1.1645667
State	Published - Feb 9 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1645667

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title = "Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys",

abstract = "The compositional dependence of the Ge-Ge mode in SnGe alloys was expressed in terms of a model that incorporates the basic physics of alloy mode frequencies in group IV alloys. Simple scaling laws that relate SnGe and GeSi vibrational modes were found. The existence of such scaling confirmed that SnGe alloys behave very similarly to the well-known GeSi alloys, in spite of the extreme differences between Sn and Ge.",

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AU - Kouvetakis, John

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N2 - The compositional dependence of the Ge-Ge mode in SnGe alloys was expressed in terms of a model that incorporates the basic physics of alloy mode frequencies in group IV alloys. Simple scaling laws that relate SnGe and GeSi vibrational modes were found. The existence of such scaling confirmed that SnGe alloys behave very similarly to the well-known GeSi alloys, in spite of the extreme differences between Sn and Ge.

AB - The compositional dependence of the Ge-Ge mode in SnGe alloys was expressed in terms of a model that incorporates the basic physics of alloy mode frequencies in group IV alloys. Simple scaling laws that relate SnGe and GeSi vibrational modes were found. The existence of such scaling confirmed that SnGe alloys behave very similarly to the well-known GeSi alloys, in spite of the extreme differences between Sn and Ge.

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Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys

Abstract

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