Scaling error of quantum efficiency measurements for heavily shunted cells in reliability research

Jaewon Oh, Govindasamy Tamizhmani, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In photovoltaic (PV) cell and module reliability and durability research, it is of great importance to acquire an accurate quantum efficiency (QE) data of shunted cells which may be obtained after certain accelerated stress tests such as potential induced degradation (PID). The challenge in measuring accurate quantum efficiency of shunted cells stems from the interplay between the poor shunt resistance and the inherent impedance imposed by the traditional QE test equipment. Unless this test equipment related impedance is very, very low, the scaling error of the measured QE would be significant. A new very low impedance method which minimizes, but not totally eliminates, those erroneous drops in the QE system has been utilized to address the scaling error of the QE data of solar cells that have very low shunt resistances. This paper presents the challenges in measuring accurate QE of heavily shunted cells without measurement artifacts and the QE results obtained with and without the newly utilized low input impedance method.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2635-2638
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • PID
  • QE
  • durability
  • photovoltaic cells
  • reliability
  • shunting

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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