Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture

J. F. Kang, B. Gao, B. Chen, P. Huang, F. F. Zhang, X. Y. Liu, H. Y. Chen, Z. Jiang, H. S Philip Wong, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages417-420
Number of pages4
ISBN (Print)9781479934324
DOIs
StatePublished - 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: Jun 1 2014Jun 5 2014

Other

Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
CountryAustralia
CityMelbourne, VIC
Period6/1/146/5/14

Fingerprint

Electrodes
Durability
Fabrication
Degradation
RRAM
Costs
Experiments

Keywords

  • 3D cross-point integration
  • scaling characteristics
  • vertical RRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kang, J. F., Gao, B., Chen, B., Huang, P., Zhang, F. F., Liu, X. Y., ... Yu, S. (2014). Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. In Proceedings - IEEE International Symposium on Circuits and Systems (pp. 417-420). [6865154] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865154

Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. / Kang, J. F.; Gao, B.; Chen, B.; Huang, P.; Zhang, F. F.; Liu, X. Y.; Chen, H. Y.; Jiang, Z.; Wong, H. S Philip; Yu, Shimeng.

Proceedings - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., 2014. p. 417-420 6865154.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, JF, Gao, B, Chen, B, Huang, P, Zhang, FF, Liu, XY, Chen, HY, Jiang, Z, Wong, HSP & Yu, S 2014, Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. in Proceedings - IEEE International Symposium on Circuits and Systems., 6865154, Institute of Electrical and Electronics Engineers Inc., pp. 417-420, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 6/1/14. https://doi.org/10.1109/ISCAS.2014.6865154
Kang JF, Gao B, Chen B, Huang P, Zhang FF, Liu XY et al. Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. In Proceedings - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc. 2014. p. 417-420. 6865154 https://doi.org/10.1109/ISCAS.2014.6865154
Kang, J. F. ; Gao, B. ; Chen, B. ; Huang, P. ; Zhang, F. F. ; Liu, X. Y. ; Chen, H. Y. ; Jiang, Z. ; Wong, H. S Philip ; Yu, Shimeng. / Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. Proceedings - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 417-420
@inproceedings{bd6e07f41ce8417e9648082a11b2a3d5,
title = "Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture",
abstract = "Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively.",
keywords = "3D cross-point integration, scaling characteristics, vertical RRAM",
author = "Kang, {J. F.} and B. Gao and B. Chen and P. Huang and Zhang, {F. F.} and Liu, {X. Y.} and Chen, {H. Y.} and Z. Jiang and Wong, {H. S Philip} and Shimeng Yu",
year = "2014",
doi = "10.1109/ISCAS.2014.6865154",
language = "English (US)",
isbn = "9781479934324",
pages = "417--420",
booktitle = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture

AU - Kang, J. F.

AU - Gao, B.

AU - Chen, B.

AU - Huang, P.

AU - Zhang, F. F.

AU - Liu, X. Y.

AU - Chen, H. Y.

AU - Jiang, Z.

AU - Wong, H. S Philip

AU - Yu, Shimeng

PY - 2014

Y1 - 2014

N2 - Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively.

AB - Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively.

KW - 3D cross-point integration

KW - scaling characteristics

KW - vertical RRAM

UR - http://www.scopus.com/inward/record.url?scp=84907408865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907408865&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2014.6865154

DO - 10.1109/ISCAS.2014.6865154

M3 - Conference contribution

SN - 9781479934324

SP - 417

EP - 420

BT - Proceedings - IEEE International Symposium on Circuits and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -