Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture

J. F. Kang, B. Gao, B. Chen, P. Huang, F. F. Zhang, X. Y. Liu, H. Y. Chen, Z. Jiang, H. S Philip Wong, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively.

Original languageEnglish (US)
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages417-420
Number of pages4
ISBN (Print)9781479934324
DOIs
StatePublished - Jan 1 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
CountryAustralia
CityMelbourne, VIC
Period6/1/146/5/14

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Keywords

  • 3D cross-point integration
  • scaling characteristics
  • vertical RRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kang, J. F., Gao, B., Chen, B., Huang, P., Zhang, F. F., Liu, X. Y., Chen, H. Y., Jiang, Z., Wong, H. S. P., & Yu, S. (2014). Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 417-420). [6865154] (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865154