Scaled silicon MOSFET's: Universal mobility behavior

Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We use a fully quantum-mechanical model to study the inversion layer mobility in a silicon MOS structure. The importance of depletion charge and surface-roughness scattering on the effective electron mobility is examined. The magnitude of the mobility is found to be considerably reduced by both depletion charge and interface-roughness scattering. The appropriate weighting coefficients a and b for the inversion and depletion charge densities in the definition of the effective electric field, which eliminate the doping dependence of the effective electron mobility, are also calculated. These are found to differ from the commonly used values of 0.5 and 1. In addition, the weighting coefficient for the depletion charge density is found to be significantly influenced by the actual shape of the doping profile and can be either >1 or <1.

Original languageEnglish (US)
Pages (from-to)577-583
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume44
Issue number4
DOIs
StatePublished - 1997

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Electron mobility
Silicon
Charge density
depletion
field effect transistors
Surface roughness
Doping (additives)
Scattering
Inversion layers
silicon
electron mobility
Electric fields
inversions
coefficients
scattering
surface roughness
roughness
electric fields
profiles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Scaled silicon MOSFET's : Universal mobility behavior. / Vasileska, Dragica; Ferry, David K.

In: IEEE Transactions on Electron Devices, Vol. 44, No. 4, 1997, p. 577-583.

Research output: Contribution to journalArticle

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