Scaled silicon MOSFET's: Degradation of the total gate capacitance

Dragica Vasileska, Dieter K. Schroder, David K. Ferry

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

We use a fully quantum-mechanical model to study the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFET's. We show that, when the device is in weak and moderate inversion, the inclusion of image and many-body exchange-correlation effects increases both the inversion layer and total gate capacitances and shifts the Ns = Ns (VG) characteristics of the device toward lower gate voltages.

Original languageEnglish (US)
Pages (from-to)584-587
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume44
Issue number4
DOIs
StatePublished - 1997

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Inversion layers
Silicon
Capacitance
field effect transistors
capacitance
inversions
degradation
Degradation
silicon
Electric potential
inclusions
shift
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Scaled silicon MOSFET's : Degradation of the total gate capacitance. / Vasileska, Dragica; Schroder, Dieter K.; Ferry, David K.

In: IEEE Transactions on Electron Devices, Vol. 44, No. 4, 1997, p. 584-587.

Research output: Contribution to journalArticle

Vasileska, Dragica ; Schroder, Dieter K. ; Ferry, David K. / Scaled silicon MOSFET's : Degradation of the total gate capacitance. In: IEEE Transactions on Electron Devices. 1997 ; Vol. 44, No. 4. pp. 584-587.
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