We use a fully quantum-mechanical model to study the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFET's. We show that, when the device is in weak and moderate inversion, the inclusion of image and many-body exchange-correlation effects increases both the inversion layer and total gate capacitances and shifts the Ns = Ns (VG) characteristics of the device toward lower gate voltages.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering