Scalable model for predicting the effect of negative bias temperature instability for reliable design

S. Bhardwaj, W. Wang, R. Vattikonda, Yu Cao, Sarma Vrudhula

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The authors present a predictive model for the negative bias temperature instability (NBTI) of PMOS under both short term and long term operation. On the basis of the reaction-diffusion mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (tox), the diffusing species (H or H2) and other key transistor and design parameters. In addition, a closed form expression for the threshold voltage change (ΔVth) under multiple cycle dynamic operation is derived. Model accuracy and efficiency were verified with 180, 130 and 90 nm silicon data. The impact of NBTI on the delay degradation of a ring oscillator and the various metrics of the SRAM such as its data retention voltage, read and hold margins, as well as read and write delay, is also investigated.

Original languageEnglish (US)
Pages (from-to)361-371
Number of pages11
JournalIET Circuits, Devices and Systems
Volume2
Issue number4
DOIs
StatePublished - 2008

Fingerprint

Static random access storage
Threshold voltage
Transistors
Degradation
Silicon
Oxides
Electric potential
Negative bias temperature instability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Scalable model for predicting the effect of negative bias temperature instability for reliable design. / Bhardwaj, S.; Wang, W.; Vattikonda, R.; Cao, Yu; Vrudhula, Sarma.

In: IET Circuits, Devices and Systems, Vol. 2, No. 4, 2008, p. 361-371.

Research output: Contribution to journalArticle

@article{fa261ae1c87b491eb5b66790a5411569,
title = "Scalable model for predicting the effect of negative bias temperature instability for reliable design",
abstract = "The authors present a predictive model for the negative bias temperature instability (NBTI) of PMOS under both short term and long term operation. On the basis of the reaction-diffusion mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (tox), the diffusing species (H or H2) and other key transistor and design parameters. In addition, a closed form expression for the threshold voltage change (ΔVth) under multiple cycle dynamic operation is derived. Model accuracy and efficiency were verified with 180, 130 and 90 nm silicon data. The impact of NBTI on the delay degradation of a ring oscillator and the various metrics of the SRAM such as its data retention voltage, read and hold margins, as well as read and write delay, is also investigated.",
author = "S. Bhardwaj and W. Wang and R. Vattikonda and Yu Cao and Sarma Vrudhula",
year = "2008",
doi = "10.1049/iet-cds:20070225",
language = "English (US)",
volume = "2",
pages = "361--371",
journal = "IET Circuits, Devices and Systems",
issn = "1751-858X",
publisher = "Institution of Engineering and Technology",
number = "4",

}

TY - JOUR

T1 - Scalable model for predicting the effect of negative bias temperature instability for reliable design

AU - Bhardwaj, S.

AU - Wang, W.

AU - Vattikonda, R.

AU - Cao, Yu

AU - Vrudhula, Sarma

PY - 2008

Y1 - 2008

N2 - The authors present a predictive model for the negative bias temperature instability (NBTI) of PMOS under both short term and long term operation. On the basis of the reaction-diffusion mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (tox), the diffusing species (H or H2) and other key transistor and design parameters. In addition, a closed form expression for the threshold voltage change (ΔVth) under multiple cycle dynamic operation is derived. Model accuracy and efficiency were verified with 180, 130 and 90 nm silicon data. The impact of NBTI on the delay degradation of a ring oscillator and the various metrics of the SRAM such as its data retention voltage, read and hold margins, as well as read and write delay, is also investigated.

AB - The authors present a predictive model for the negative bias temperature instability (NBTI) of PMOS under both short term and long term operation. On the basis of the reaction-diffusion mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (tox), the diffusing species (H or H2) and other key transistor and design parameters. In addition, a closed form expression for the threshold voltage change (ΔVth) under multiple cycle dynamic operation is derived. Model accuracy and efficiency were verified with 180, 130 and 90 nm silicon data. The impact of NBTI on the delay degradation of a ring oscillator and the various metrics of the SRAM such as its data retention voltage, read and hold margins, as well as read and write delay, is also investigated.

UR - http://www.scopus.com/inward/record.url?scp=49149121230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49149121230&partnerID=8YFLogxK

U2 - 10.1049/iet-cds:20070225

DO - 10.1049/iet-cds:20070225

M3 - Article

AN - SCOPUS:49149121230

VL - 2

SP - 361

EP - 371

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

SN - 1751-858X

IS - 4

ER -