Sb2S3: C/CdS p-n junction by laser irradiation

A. Arato, E. Cárdenas, S. Shaji, J. J. O'Brien, Jingyue Liu, G. Alan Castillo, T. K. Das Roy, B. Krishnan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, we report laser irradiated carbon doping of Sb2S3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb2S3 thin films of approximately 0.5 μm in thickness. Sb2S3 thin films were prepared from a solution containing SbCl3 and Na2S2O3 at 27 °C for 5 h and the films obtained were highly resistive. These C/Sb2S3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb2 S3:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb2S3:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl2, sodium citrate, NH4OH and thiourea at 70 °C. On the CdS film, Sb2S3/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb2S3 side facing the beam. The p-n junction formed by p-Sb2S3:C and n-type CdS showed Voc = 500 mV and Jsc = 0.5 mA/cm2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

Original languageEnglish (US)
Pages (from-to)2493-2496
Number of pages4
JournalThin Solid Films
Volume517
Issue number7
DOIs
StatePublished - Feb 2 2009
Externally publishedYes

Fingerprint

Laser beam effects
p-n junctions
Thin films
irradiation
thin films
lasers
Carbon
ITO (semiconductors)
Lasers
baths
carbon lasers
laser beams
ITO glass
Cadmium Chloride
Thiourea
Tungsten
Halogens
Thioureas
glass
carbon

Keywords

  • Antimony sulphide
  • Laser annealing
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Arato, A., Cárdenas, E., Shaji, S., O'Brien, J. J., Liu, J., Castillo, G. A., ... Krishnan, B. (2009). Sb2S3: C/CdS p-n junction by laser irradiation. Thin Solid Films, 517(7), 2493-2496. https://doi.org/10.1016/j.tsf.2008.11.025

Sb2S3 : C/CdS p-n junction by laser irradiation. / Arato, A.; Cárdenas, E.; Shaji, S.; O'Brien, J. J.; Liu, Jingyue; Castillo, G. Alan; Das Roy, T. K.; Krishnan, B.

In: Thin Solid Films, Vol. 517, No. 7, 02.02.2009, p. 2493-2496.

Research output: Contribution to journalArticle

Arato, A, Cárdenas, E, Shaji, S, O'Brien, JJ, Liu, J, Castillo, GA, Das Roy, TK & Krishnan, B 2009, 'Sb2S3: C/CdS p-n junction by laser irradiation', Thin Solid Films, vol. 517, no. 7, pp. 2493-2496. https://doi.org/10.1016/j.tsf.2008.11.025
Arato A, Cárdenas E, Shaji S, O'Brien JJ, Liu J, Castillo GA et al. Sb2S3: C/CdS p-n junction by laser irradiation. Thin Solid Films. 2009 Feb 2;517(7):2493-2496. https://doi.org/10.1016/j.tsf.2008.11.025
Arato, A. ; Cárdenas, E. ; Shaji, S. ; O'Brien, J. J. ; Liu, Jingyue ; Castillo, G. Alan ; Das Roy, T. K. ; Krishnan, B. / Sb2S3 : C/CdS p-n junction by laser irradiation. In: Thin Solid Films. 2009 ; Vol. 517, No. 7. pp. 2493-2496.
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abstract = "In this paper, we report laser irradiated carbon doping of Sb2S3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb2S3 thin films of approximately 0.5 μm in thickness. Sb2S3 thin films were prepared from a solution containing SbCl3 and Na2S2O3 at 27 °C for 5 h and the films obtained were highly resistive. These C/Sb2S3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb2 S3:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb2S3:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl2, sodium citrate, NH4OH and thiourea at 70 °C. On the CdS film, Sb2S3/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb2S3 side facing the beam. The p-n junction formed by p-Sb2S3:C and n-type CdS showed Voc = 500 mV and Jsc = 0.5 mA/cm2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.",
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AU - Shaji, S.

AU - O'Brien, J. J.

AU - Liu, Jingyue

AU - Castillo, G. Alan

AU - Das Roy, T. K.

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AB - In this paper, we report laser irradiated carbon doping of Sb2S3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb2S3 thin films of approximately 0.5 μm in thickness. Sb2S3 thin films were prepared from a solution containing SbCl3 and Na2S2O3 at 27 °C for 5 h and the films obtained were highly resistive. These C/Sb2S3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb2 S3:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb2S3:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl2, sodium citrate, NH4OH and thiourea at 70 °C. On the CdS film, Sb2S3/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb2S3 side facing the beam. The p-n junction formed by p-Sb2S3:C and n-type CdS showed Voc = 500 mV and Jsc = 0.5 mA/cm2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

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