Abstract

The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0% to 2% and growth temperatures from 580 to 720°C was presented. It was found that the surface morphology and electrical properties strongly depend on the growth temperature and Sb flux. Sb improves the conductivity of n-Al 0.65Ga 0.35As and reduces the conductivity of p-Al 0.65Ga 0.35As, as an isoelectronic dopant. Sb improves the surface morphology of Al 0.65Ga 0.35As at all growth temperatures with the most dramatic improvement occuring at 670°C, as a surfactant.

Original languageEnglish (US)
Pages (from-to)1436-1440
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
StatePublished - May 2004

Fingerprint

Growth temperature
Molecular beam epitaxy
aluminum gallium arsenides
molecular beam epitaxy
Surface morphology
Fluxes
conductivity
Electric properties
Surface active agents
Doping (additives)
temperature
surfactants
electrical properties

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy. / Johnson, Shane; Sadofyev, Yu G.; Ding, D.; Cao, Yu; Chaparro, S. A.; Franzreb, K.; Zhang, Yong-Hang.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 05.2004, p. 1436-1440.

Research output: Contribution to journalArticle

@article{8c198e89f49041a2bfacea82fcb5cd68,
title = "Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy",
abstract = "The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0{\%} to 2{\%} and growth temperatures from 580 to 720°C was presented. It was found that the surface morphology and electrical properties strongly depend on the growth temperature and Sb flux. Sb improves the conductivity of n-Al 0.65Ga 0.35As and reduces the conductivity of p-Al 0.65Ga 0.35As, as an isoelectronic dopant. Sb improves the surface morphology of Al 0.65Ga 0.35As at all growth temperatures with the most dramatic improvement occuring at 670°C, as a surfactant.",
author = "Shane Johnson and Sadofyev, {Yu G.} and D. Ding and Yu Cao and Chaparro, {S. A.} and K. Franzreb and Yong-Hang Zhang",
year = "2004",
month = "5",
language = "English (US)",
volume = "22",
pages = "1436--1440",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy

AU - Johnson, Shane

AU - Sadofyev, Yu G.

AU - Ding, D.

AU - Cao, Yu

AU - Chaparro, S. A.

AU - Franzreb, K.

AU - Zhang, Yong-Hang

PY - 2004/5

Y1 - 2004/5

N2 - The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0% to 2% and growth temperatures from 580 to 720°C was presented. It was found that the surface morphology and electrical properties strongly depend on the growth temperature and Sb flux. Sb improves the conductivity of n-Al 0.65Ga 0.35As and reduces the conductivity of p-Al 0.65Ga 0.35As, as an isoelectronic dopant. Sb improves the surface morphology of Al 0.65Ga 0.35As at all growth temperatures with the most dramatic improvement occuring at 670°C, as a surfactant.

AB - The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0% to 2% and growth temperatures from 580 to 720°C was presented. It was found that the surface morphology and electrical properties strongly depend on the growth temperature and Sb flux. Sb improves the conductivity of n-Al 0.65Ga 0.35As and reduces the conductivity of p-Al 0.65Ga 0.35As, as an isoelectronic dopant. Sb improves the surface morphology of Al 0.65Ga 0.35As at all growth temperatures with the most dramatic improvement occuring at 670°C, as a surfactant.

UR - http://www.scopus.com/inward/record.url?scp=3242733125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242733125&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3242733125

VL - 22

SP - 1436

EP - 1440

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -