Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

R. Garcia, K. E. Daley, Robert Culbertson, R. J. Culbertson, D. B. Poker

Research output: Contribution to journalArticle

Abstract

Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1×10 ions/cm of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 °C and for 1 min at 960 °C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the C(α,α)C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region.

Original languageEnglish (US)
Pages (from-to)662-665
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - May 1995

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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