Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

R. Garcia; K. E. Daley; Robert Culbertson; R. J. Culbertson; D. B. Poker

doi:10.1116/1.579803

Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

R. Garcia, K. E. Daley, Robert Culbertson, R. J. Culbertson, D. B. Poker

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1×10 ions/cm of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 °C and for 1 min at 960 °C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the C(α,α)C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region.

Original language	English (US)
Pages (from-to)	662-665
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	13
Issue number	3
DOIs	https://doi.org/10.1116/1.579803
State	Published - May 1995

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)",

abstract = "Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1×10 ions/cm of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 °C and for 1 min at 960 °C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the C(α,α)C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region.",

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T1 - Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

AU - Garcia, R.

AU - Daley, K. E.

AU - Culbertson, Robert

AU - Culbertson, R. J.

AU - Poker, D. B.

PY - 1995/5

Y1 - 1995/5

N2 - Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1×10 ions/cm of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 °C and for 1 min at 960 °C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the C(α,α)C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region.

AB - Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1×10 ions/cm of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 °C and for 1 min at 960 °C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the C(α,α)C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region.

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Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

Abstract

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