Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates

Z. Zhang, K. Ghosh, N. N. Faleev, H. Wang, C. B. Honsberg, P. Reece, S. P. Bremner

Research output: Contribution to journalArticlepeer-review

Abstract

A Sb dissociative surface coverage model for the incorporation of antimony in GaAsSb layers, has been used to analyze and predict the composition of GaAsSb layers grown on GaAs substrates. The surface coverage model is based on adatoms behaving according to a modified Langmuir isotherm when on the growth surface. After obtaining key parameters for describing the desorption of Sb atoms from a GaAs surface the model was used to fit the composition variation with changing Sb flux of pseudomorphic GaAsSb layers grown by molecular beam epitaxy on GaAs(0 0 1) substrates at growth temperatures of 470 °C, 500 °C and 530 °C. The set of parameters that provided the best fit to the data for all of these temperatures was then used to predict the incorporation rate as a function of As flux and growth rate with good agreement showing the validity of the Sb dissociative surface coverage model.

Original languageEnglish (US)
Article number125231
JournalJournal of Crystal Growth
Volume526
DOIs
StatePublished - Nov 15 2019

Keywords

  • A1. Growth models
  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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