Saturation transconductance of deep-submicron-channel MOSFETs

Y. Taur, C. H. Hsu, B. Wu, Richard Kiehl, B. Davari, G. Shahidi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A new method is described for extracting electron and hole saturation velocities from saturation currents of deep-submicron-channel N- and PMOSFET's at room and low temperatures. The extracted results are (7 ± 0.5) × 106 cm/s at 300 K and (8 ± 0.5) × 106 cm/s at 77 K for electrons; and (7 ± 1) × 106 cm/s at both 300 and 77 K for holes. These numbers are used in an analytical model to calculate the MOSFET saturation transconductance as a function of channel length. Excellent agreement is obtained between the experimentally measured saturation transconductance at 300 and 77 K and the model calculations over a wide range of channel length from 10 to 0.15 μm. This also sets up a procedure for identifying the onset of velocity overshoot, which is reflected in the 77 K NMOSFET data below 0.25 μm.

Original languageEnglish (US)
Pages (from-to)1085-1087
Number of pages3
JournalSolid State Electronics
Volume36
Issue number8
DOIs
StatePublished - 1993
Externally publishedYes

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Transconductance
transconductance
field effect transistors
saturation
Electrons
Analytical models
electrons
Temperature
room temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Saturation transconductance of deep-submicron-channel MOSFETs. / Taur, Y.; Hsu, C. H.; Wu, B.; Kiehl, Richard; Davari, B.; Shahidi, G.

In: Solid State Electronics, Vol. 36, No. 8, 1993, p. 1085-1087.

Research output: Contribution to journalArticle

Taur, Y. ; Hsu, C. H. ; Wu, B. ; Kiehl, Richard ; Davari, B. ; Shahidi, G. / Saturation transconductance of deep-submicron-channel MOSFETs. In: Solid State Electronics. 1993 ; Vol. 36, No. 8. pp. 1085-1087.
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AU - Davari, B.

AU - Shahidi, G.

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