The selectivity, nanostructure and electrical resistivity of Ru films on HfO 2/SiO x/Si wafers by digital chemical vapor deposition (DCVD) was studied. An alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru and oxygen was used for DCVD of Ru at 280-320°C. The presence of an amorphous RuO x at the Ru grain boundaries was indicated by Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy and high-resolution electron microscopy. The results show that the estimated work function of DCVD-Ru on atomic layer deposition (ALD)-HfO 2 is ∼5. 1 eV.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)