Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

Sandwip Dey, Jaydeb Goswami, Diefeng Gu, Henk De Waard, Steve Marcus, Chris Werkhoven

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The selectivity, nanostructure and electrical resistivity of Ru films on HfO 2/SiO x/Si wafers by digital chemical vapor deposition (DCVD) was studied. An alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru and oxygen was used for DCVD of Ru at 280-320°C. The presence of an amorphous RuO x at the Ru grain boundaries was indicated by Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy and high-resolution electron microscopy. The results show that the estimated work function of DCVD-Ru on atomic layer deposition (ALD)-HfO 2 is ∼5. 1 eV.

Original languageEnglish (US)
Pages (from-to)1606-1608
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
StatePublished - Mar 1 2004

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ruthenium
selectivity
vapor deposition
electrical resistivity
atomic layer epitaxy
x ray spectroscopy
delivery
backscattering
electron microscopy
grain boundaries
photoelectron spectroscopy
wafers
high resolution
oxygen
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ruthenium films by digital chemical vapor deposition : Selectivity, nanostructure, and work function. / Dey, Sandwip; Goswami, Jaydeb; Gu, Diefeng; De Waard, Henk; Marcus, Steve; Werkhoven, Chris.

In: Applied Physics Letters, Vol. 84, No. 9, 01.03.2004, p. 1606-1608.

Research output: Contribution to journalArticle

Dey, Sandwip ; Goswami, Jaydeb ; Gu, Diefeng ; De Waard, Henk ; Marcus, Steve ; Werkhoven, Chris. / Ruthenium films by digital chemical vapor deposition : Selectivity, nanostructure, and work function. In: Applied Physics Letters. 2004 ; Vol. 84, No. 9. pp. 1606-1608.
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