Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

Sandwip Dey, Jaydeb Goswami, Diefeng Gu, Henk De Waard, Steve Marcus, Chris Werkhoven

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

The selectivity, nanostructure and electrical resistivity of Ru films on HfO 2/SiO x/Si wafers by digital chemical vapor deposition (DCVD) was studied. An alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru and oxygen was used for DCVD of Ru at 280-320°C. The presence of an amorphous RuO x at the Ru grain boundaries was indicated by Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy and high-resolution electron microscopy. The results show that the estimated work function of DCVD-Ru on atomic layer deposition (ALD)-HfO 2 is ∼5. 1 eV.

Original languageEnglish (US)
Pages (from-to)1606-1608
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
StatePublished - Mar 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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