TY - JOUR
T1 - Ruthenium films by digital chemical vapor deposition
T2 - Selectivity, nanostructure, and work function
AU - Dey, Sandwip
AU - Goswami, Jaydeb
AU - Gu, Diefeng
AU - De Waard, Henk
AU - Marcus, Steve
AU - Werkhoven, Chris
PY - 2004/3/1
Y1 - 2004/3/1
N2 - The selectivity, nanostructure and electrical resistivity of Ru films on HfO 2/SiO x/Si wafers by digital chemical vapor deposition (DCVD) was studied. An alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru and oxygen was used for DCVD of Ru at 280-320°C. The presence of an amorphous RuO x at the Ru grain boundaries was indicated by Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy and high-resolution electron microscopy. The results show that the estimated work function of DCVD-Ru on atomic layer deposition (ALD)-HfO 2 is ∼5. 1 eV.
AB - The selectivity, nanostructure and electrical resistivity of Ru films on HfO 2/SiO x/Si wafers by digital chemical vapor deposition (DCVD) was studied. An alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru and oxygen was used for DCVD of Ru at 280-320°C. The presence of an amorphous RuO x at the Ru grain boundaries was indicated by Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy and high-resolution electron microscopy. The results show that the estimated work function of DCVD-Ru on atomic layer deposition (ALD)-HfO 2 is ∼5. 1 eV.
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U2 - 10.1063/1.1650911
DO - 10.1063/1.1650911
M3 - Article
AN - SCOPUS:1642588346
SN - 0003-6951
VL - 84
SP - 1606
EP - 1608
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
ER -