Run-to-run adaptive optimization of a tungsten silicide LPCVD process

Timothy S. Cale, Peter E. Crouch, Sisan Shen, Konstantinos Tsakalis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A novel modeling technique is introduced in an effort to develop a physically-motivated empirical model of the deposition rate and radial deposition nonuniformity for a single-wafer Tungsten Silicide Low Pressure Chemical Vapor Deposition (LPCVD) processing step. Based on this modeling method, a run-to-run adaptive control/optimization strategy is derived with the aim to achieve prescribe values of the average deposition rate and silicon to tungsten ratio at the wafer surface, while minimizing the variation of the deposition rate across the wafer surface. The effectiveness of this control strategy is demonstrated by simulation results, using the simulation platform CFDSWR to represent the single water tungsten silicide LPCVD process.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Decision and Control
PublisherIEEE
Pages2474-2475
Number of pages2
Volume3
StatePublished - 1995
EventProceedings of the 1995 34th IEEE Conference on Decision and Control. Part 1 (of 4) - New Orleans, LA, USA
Duration: Dec 13 1995Dec 15 1995

Other

OtherProceedings of the 1995 34th IEEE Conference on Decision and Control. Part 1 (of 4)
CityNew Orleans, LA, USA
Period12/13/9512/15/95

Fingerprint

Low pressure chemical vapor deposition
Tungsten
Deposition rates
Silicon
Water
Processing

ASJC Scopus subject areas

  • Chemical Health and Safety
  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Cale, T. S., Crouch, P. E., Shen, S., & Tsakalis, K. (1995). Run-to-run adaptive optimization of a tungsten silicide LPCVD process. In Proceedings of the IEEE Conference on Decision and Control (Vol. 3, pp. 2474-2475). IEEE.

Run-to-run adaptive optimization of a tungsten silicide LPCVD process. / Cale, Timothy S.; Crouch, Peter E.; Shen, Sisan; Tsakalis, Konstantinos.

Proceedings of the IEEE Conference on Decision and Control. Vol. 3 IEEE, 1995. p. 2474-2475.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cale, TS, Crouch, PE, Shen, S & Tsakalis, K 1995, Run-to-run adaptive optimization of a tungsten silicide LPCVD process. in Proceedings of the IEEE Conference on Decision and Control. vol. 3, IEEE, pp. 2474-2475, Proceedings of the 1995 34th IEEE Conference on Decision and Control. Part 1 (of 4), New Orleans, LA, USA, 12/13/95.
Cale TS, Crouch PE, Shen S, Tsakalis K. Run-to-run adaptive optimization of a tungsten silicide LPCVD process. In Proceedings of the IEEE Conference on Decision and Control. Vol. 3. IEEE. 1995. p. 2474-2475
Cale, Timothy S. ; Crouch, Peter E. ; Shen, Sisan ; Tsakalis, Konstantinos. / Run-to-run adaptive optimization of a tungsten silicide LPCVD process. Proceedings of the IEEE Conference on Decision and Control. Vol. 3 IEEE, 1995. pp. 2474-2475
@inproceedings{e42a485d492d406281d94b59dbc10af4,
title = "Run-to-run adaptive optimization of a tungsten silicide LPCVD process",
abstract = "A novel modeling technique is introduced in an effort to develop a physically-motivated empirical model of the deposition rate and radial deposition nonuniformity for a single-wafer Tungsten Silicide Low Pressure Chemical Vapor Deposition (LPCVD) processing step. Based on this modeling method, a run-to-run adaptive control/optimization strategy is derived with the aim to achieve prescribe values of the average deposition rate and silicon to tungsten ratio at the wafer surface, while minimizing the variation of the deposition rate across the wafer surface. The effectiveness of this control strategy is demonstrated by simulation results, using the simulation platform CFDSWR to represent the single water tungsten silicide LPCVD process.",
author = "Cale, {Timothy S.} and Crouch, {Peter E.} and Sisan Shen and Konstantinos Tsakalis",
year = "1995",
language = "English (US)",
volume = "3",
pages = "2474--2475",
booktitle = "Proceedings of the IEEE Conference on Decision and Control",
publisher = "IEEE",

}

TY - GEN

T1 - Run-to-run adaptive optimization of a tungsten silicide LPCVD process

AU - Cale, Timothy S.

AU - Crouch, Peter E.

AU - Shen, Sisan

AU - Tsakalis, Konstantinos

PY - 1995

Y1 - 1995

N2 - A novel modeling technique is introduced in an effort to develop a physically-motivated empirical model of the deposition rate and radial deposition nonuniformity for a single-wafer Tungsten Silicide Low Pressure Chemical Vapor Deposition (LPCVD) processing step. Based on this modeling method, a run-to-run adaptive control/optimization strategy is derived with the aim to achieve prescribe values of the average deposition rate and silicon to tungsten ratio at the wafer surface, while minimizing the variation of the deposition rate across the wafer surface. The effectiveness of this control strategy is demonstrated by simulation results, using the simulation platform CFDSWR to represent the single water tungsten silicide LPCVD process.

AB - A novel modeling technique is introduced in an effort to develop a physically-motivated empirical model of the deposition rate and radial deposition nonuniformity for a single-wafer Tungsten Silicide Low Pressure Chemical Vapor Deposition (LPCVD) processing step. Based on this modeling method, a run-to-run adaptive control/optimization strategy is derived with the aim to achieve prescribe values of the average deposition rate and silicon to tungsten ratio at the wafer surface, while minimizing the variation of the deposition rate across the wafer surface. The effectiveness of this control strategy is demonstrated by simulation results, using the simulation platform CFDSWR to represent the single water tungsten silicide LPCVD process.

UR - http://www.scopus.com/inward/record.url?scp=0029518201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029518201&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029518201

VL - 3

SP - 2474

EP - 2475

BT - Proceedings of the IEEE Conference on Decision and Control

PB - IEEE

ER -