RRAM based synaptic devices for neuromorphic visual systems

J. F. Kang, B. Gao, P. Huang, L. F. Liu, X. Y. Liu, H. Y. Yu, Shimeng Yu, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Neuromorphic computing is an attractive computation paradigm with the features of massive parallelism, adaptivity to the complex input information, and tolerance to errors. As one of the most crucial components in a neuromorphic system, the electronic synapse requires high device integration density and low-energy consumption. Oxide-based resistive switching devices (RRAM) have emerged as the leading candidate to realize the synapse functions due to the extra-low energy loss per spike. This work will address the design and optimization of oxide-based RRAM synaptic devices and the impacts of the synaptic devices parameters on the performance of neuromorphic visual system. Possible solutions are also provided to suppress the intrinsic variation of the oxide-RRAM based synaptic devices to achieve high recognition accuracy and efficiency of neuromorphic visual systems.

Original languageEnglish (US)
Title of host publicationInternational Conference on Digital Signal Processing, DSP
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1219-1222
Number of pages4
Volume2015-September
ISBN (Print)9781479980581, 9781479980581
DOIs
StatePublished - Sep 9 2015
EventIEEE International Conference on Digital Signal Processing, DSP 2015 - Singapore, Singapore
Duration: Jul 21 2015Jul 24 2015

Other

OtherIEEE International Conference on Digital Signal Processing, DSP 2015
Country/TerritorySingapore
CitySingapore
Period7/21/157/24/15

Keywords

  • Neural Cell
  • Neuromorphic Computing
  • RRAM
  • Synapse

ASJC Scopus subject areas

  • Signal Processing

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