Abstract
Neuromorphic computing is an attractive computation paradigm with the features of massive parallelism, adaptivity to the complex input information, and tolerance to errors. As one of the most crucial components in a neuromorphic system, the electronic synapse requires high device integration density and low-energy consumption. Oxide-based resistive switching devices (RRAM) have emerged as the leading candidate to realize the synapse functions due to the extra-low energy loss per spike. This work will address the design and optimization of oxide-based RRAM synaptic devices and the impacts of the synaptic devices parameters on the performance of neuromorphic visual system. Possible solutions are also provided to suppress the intrinsic variation of the oxide-RRAM based synaptic devices to achieve high recognition accuracy and efficiency of neuromorphic visual systems.
Original language | English (US) |
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Title of host publication | International Conference on Digital Signal Processing, DSP |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1219-1222 |
Number of pages | 4 |
Volume | 2015-September |
ISBN (Print) | 9781479980581, 9781479980581 |
DOIs | |
State | Published - Sep 9 2015 |
Event | IEEE International Conference on Digital Signal Processing, DSP 2015 - Singapore, Singapore Duration: Jul 21 2015 → Jul 24 2015 |
Other
Other | IEEE International Conference on Digital Signal Processing, DSP 2015 |
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Country/Territory | Singapore |
City | Singapore |
Period | 7/21/15 → 7/24/15 |
Keywords
- Neural Cell
- Neuromorphic Computing
- RRAM
- Synapse
ASJC Scopus subject areas
- Signal Processing