Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition

Zachary Lochner, Tsung Ting Kao, Yuh Shiuan Liu, Xiao Hang Li, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8625
DOIs
StatePublished - 2013
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: Feb 4 2013Feb 7 2013

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period2/4/132/7/13

Fingerprint

AlGaN
Aluminum Nitride
Chemical Vapor Deposition
Metallorganic chemical vapor deposition
Quantum Well
Semiconductor quantum wells
metalorganic chemical vapor deposition
Optically pumped lasers
quantum wells
Laser
Lasers
Growth temperature
Excimer lasers
room temperature
Substrates
Buffer layers
excimer lasers
lasers
buffers
Substrate

Keywords

  • Deep ultraviolet
  • III-V semiconductors
  • Lasers
  • Metalorganic chemical vapor deposition
  • Optical pumping

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Satter, M. M., Shen, S. C., ... Ponce, F. (2013). Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8625). [862519] https://doi.org/10.1117/12.2008830

Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. / Lochner, Zachary; Kao, Tsung Ting; Liu, Yuh Shiuan; Li, Xiao Hang; Satter, Md Mahbub; Shen, Shyh Chiang; Yoder, P. Douglas; Ryou, Jae Hyun; Dupuis, Russell D.; Wei, Yong; Xie, Hongen; Fischer, Alec; Ponce, Fernando.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8625 2013. 862519.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lochner, Z, Kao, TT, Liu, YS, Li, XH, Satter, MM, Shen, SC, Yoder, PD, Ryou, JH, Dupuis, RD, Wei, Y, Xie, H, Fischer, A & Ponce, F 2013, Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8625, 862519, SPIE Symposium on Gallium Nitride Materials and Devices VIII, San Francisco, CA, United States, 2/4/13. https://doi.org/10.1117/12.2008830
Lochner Z, Kao TT, Liu YS, Li XH, Satter MM, Shen SC et al. Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8625. 2013. 862519 https://doi.org/10.1117/12.2008830
Lochner, Zachary ; Kao, Tsung Ting ; Liu, Yuh Shiuan ; Li, Xiao Hang ; Satter, Md Mahbub ; Shen, Shyh Chiang ; Yoder, P. Douglas ; Ryou, Jae Hyun ; Dupuis, Russell D. ; Wei, Yong ; Xie, Hongen ; Fischer, Alec ; Ponce, Fernando. / Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8625 2013.
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abstract = "Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.",
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AU - Lochner, Zachary

AU - Kao, Tsung Ting

AU - Liu, Yuh Shiuan

AU - Li, Xiao Hang

AU - Satter, Md Mahbub

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando

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N2 - Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.

AB - Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.

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KW - Lasers

KW - Metalorganic chemical vapor deposition

KW - Optical pumping

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