Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition

Zachary Lochner, Tsung Ting Kao, Yuh Shiuan Liu, Xiao Hang Li, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VIII
DOIs
StatePublished - Jun 12 2013
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: Feb 4 2013Feb 7 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8625
ISSN (Print)0277-786X

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period2/4/132/7/13

Keywords

  • Deep ultraviolet
  • III-V semiconductors
  • Lasers
  • Metalorganic chemical vapor deposition
  • Optical pumping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Satter, M. M., Shen, S. C., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A., & Ponce, F. (2013). Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. In Gallium Nitride Materials and Devices VIII [862519] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625). https://doi.org/10.1117/12.2008830