Room temperature continuous-wave operation of 1.3 μm GaAsP/GaAs/GaAsSb VCSELs grown on GaAs

Shane Johnson, S. Chaparro, N. Samal, P. Dowd, S. Q. Yu, J. B. Wang, K. Shiralagi, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs is reported. Power outputs up to 200 μW and wavelengths up to 1290 nm are achieved, making them suitable for optical data-communications applications.

Original languageEnglish (US)
Title of host publicationEuropean Conference on Optical Communication, ECOC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume1
ISBN (Print)8790974638
StatePublished - 2002
Event28th European Conference on Optical Communication, ECOC 2002 - Copenhagen, Denmark
Duration: Sep 9 2002 → …

Other

Other28th European Conference on Optical Communication, ECOC 2002
CountryDenmark
CityCopenhagen
Period9/9/02 → …

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Johnson, S., Chaparro, S., Samal, N., Dowd, P., Yu, S. Q., Wang, J. B., Shiralagi, K., & Zhang, Y-H. (2002). Room temperature continuous-wave operation of 1.3 μm GaAsP/GaAs/GaAsSb VCSELs grown on GaAs. In European Conference on Optical Communication, ECOC (Vol. 1). [1600899] Institute of Electrical and Electronics Engineers Inc..