Abstract
Monolayer transition-metal dichalcogenides (TMDs) have the potential to become efficient optical-gain materials for low-energy-consumption nanolasers with the smallest gain media because of strong excitonic emission. However, until now TMD-based lasing has been realized only at low temperatures. Here we demonstrate for the first time a room-temperature laser operation in the infrared region from a monolayer of molybdenum ditelluride on a silicon photonic-crystal cavity. The observation is enabled by the unique combination of a TMD monolayer with an emission wavelength transparent to silicon, and a high-Q cavity of the silicon nanobeam. The laser is pumped by a continuous-wave excitation, with a threshold density of 6.6 cm-2. Its linewidth is as narrow as 0.202 nm with a corresponding Q of 5,603, the largest value reported for a TMD laser. This demonstration establishes TMDs as practical materials for integrated TMD-silicon nanolasers suitable for silicon-based nanophotonic applications in silicon-transparent wavelengths.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 987-992 |
| Number of pages | 6 |
| Journal | Nature Nanotechnology |
| Volume | 12 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1 2017 |
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ASJC Scopus subject areas
- Bioengineering
- Atomic and Molecular Physics, and Optics
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity. / Li, Yongzhuo; Zhang, Jianxing; Huang, Dandan; Sun, Hao; Fan, Fan; Feng, Jiabin; Wang, Zhen; Ning, Cun-Zheng.
In: Nature Nanotechnology, Vol. 12, No. 10, 01.10.2017, p. 987-992.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity
AU - Li, Yongzhuo
AU - Zhang, Jianxing
AU - Huang, Dandan
AU - Sun, Hao
AU - Fan, Fan
AU - Feng, Jiabin
AU - Wang, Zhen
AU - Ning, Cun-Zheng
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Monolayer transition-metal dichalcogenides (TMDs) have the potential to become efficient optical-gain materials for low-energy-consumption nanolasers with the smallest gain media because of strong excitonic emission. However, until now TMD-based lasing has been realized only at low temperatures. Here we demonstrate for the first time a room-temperature laser operation in the infrared region from a monolayer of molybdenum ditelluride on a silicon photonic-crystal cavity. The observation is enabled by the unique combination of a TMD monolayer with an emission wavelength transparent to silicon, and a high-Q cavity of the silicon nanobeam. The laser is pumped by a continuous-wave excitation, with a threshold density of 6.6 cm-2. Its linewidth is as narrow as 0.202 nm with a corresponding Q of 5,603, the largest value reported for a TMD laser. This demonstration establishes TMDs as practical materials for integrated TMD-silicon nanolasers suitable for silicon-based nanophotonic applications in silicon-transparent wavelengths.
AB - Monolayer transition-metal dichalcogenides (TMDs) have the potential to become efficient optical-gain materials for low-energy-consumption nanolasers with the smallest gain media because of strong excitonic emission. However, until now TMD-based lasing has been realized only at low temperatures. Here we demonstrate for the first time a room-temperature laser operation in the infrared region from a monolayer of molybdenum ditelluride on a silicon photonic-crystal cavity. The observation is enabled by the unique combination of a TMD monolayer with an emission wavelength transparent to silicon, and a high-Q cavity of the silicon nanobeam. The laser is pumped by a continuous-wave excitation, with a threshold density of 6.6 cm-2. Its linewidth is as narrow as 0.202 nm with a corresponding Q of 5,603, the largest value reported for a TMD laser. This demonstration establishes TMDs as practical materials for integrated TMD-silicon nanolasers suitable for silicon-based nanophotonic applications in silicon-transparent wavelengths.
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U2 - 10.1038/nnano.2017.128
DO - 10.1038/nnano.2017.128
M3 - Article
C2 - 28737750
AN - SCOPUS:85030756445
VL - 12
SP - 987
EP - 992
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 10
ER -