Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments

Y. Gonzalez-Velo, J. Boch, F. Saigné, N. J.H. Roche, S. Pérez, C. Deneau, J. R. Vaille, L. Dusseau, R. D. Schrimpf, E. Lorfèvre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Unexpected recovery observed in previous dose-rate switching experiments is investigated. Irradiation and room-temperature annealing are performed on LM124 microcircuits and results are discussed in terms of hardness assurance.

Original languageEnglish (US)
Title of host publicationRADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages84-87
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

Keywords

  • Analog IC
  • Dose
  • ELDRS
  • Switched dose-rate technique
  • annealing
  • bipolar devices

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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  • Cite this

    Gonzalez-Velo, Y., Boch, J., Saigné, F., Roche, N. J. H., Pérez, S., Deneau, C., Vaille, J. R., Dusseau, L., Schrimpf, R. D., & Lorfèvre, E. (2011). Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 84-87). [6131373] (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2011.6131373