Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments

Yago Gonzalez Velo, J. Boch, F. Saigné, N. J.H. Roche, S. Pérez, C. Deneau, J. R. Vaille, L. Dusseau, R. D. Schrimpf, E. Lorfèvre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Unexpected recovery observed in previous dose-rate switching experiments is investigated. Irradiation and room-temperature annealing are performed on LM124 microcircuits and results are discussed in terms of hardness assurance.

Original languageEnglish (US)
Title of host publicationRADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages84-87
Number of pages4
DOIs
StatePublished - Dec 1 2011
Externally publishedYes
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

Fingerprint

assurance
microelectronics
Dosimetry
hardness
Hardness
recovery
Irradiation
Annealing
Recovery
dosage
irradiation
annealing
room temperature
Experiments
Temperature

Keywords

  • Analog IC
  • annealing
  • bipolar devices
  • Dose
  • ELDRS
  • Switched dose-rate technique

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

Gonzalez Velo, Y., Boch, J., Saigné, F., Roche, N. J. H., Pérez, S., Deneau, C., ... Lorfèvre, E. (2011). Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 84-87). [6131373] https://doi.org/10.1109/RADECS.2011.6131373

Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments. / Gonzalez Velo, Yago; Boch, J.; Saigné, F.; Roche, N. J.H.; Pérez, S.; Deneau, C.; Vaille, J. R.; Dusseau, L.; Schrimpf, R. D.; Lorfèvre, E.

RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 84-87 6131373.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gonzalez Velo, Y, Boch, J, Saigné, F, Roche, NJH, Pérez, S, Deneau, C, Vaille, JR, Dusseau, L, Schrimpf, RD & Lorfèvre, E 2011, Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments. in RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings., 6131373, pp. 84-87, 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, Sevilla, Spain, 9/19/11. https://doi.org/10.1109/RADECS.2011.6131373
Gonzalez Velo Y, Boch J, Saigné F, Roche NJH, Pérez S, Deneau C et al. Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 84-87. 6131373 https://doi.org/10.1109/RADECS.2011.6131373
Gonzalez Velo, Yago ; Boch, J. ; Saigné, F. ; Roche, N. J.H. ; Pérez, S. ; Deneau, C. ; Vaille, J. R. ; Dusseau, L. ; Schrimpf, R. D. ; Lorfèvre, E. / Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments. RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. pp. 84-87
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AU - Roche, N. J.H.

AU - Pérez, S.

AU - Deneau, C.

AU - Vaille, J. R.

AU - Dusseau, L.

AU - Schrimpf, R. D.

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KW - ELDRS

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