Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length

U. K. Mishra, A. S. Brown, L. M. Jelloian, M. Thompson, S. E. Rosenbaum, L. D. Nguyen, P. M. Solomon, R. Kiehl, Y. H. Kwark

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsLester F. Eastman
PublisherPubl by Int Soc for Optical Engineering
Pages21-29
Number of pages9
ISBN (Print)0819403393
StatePublished - Dec 1 1990
Externally publishedYes
EventHigh-Speed Electronics and Device Scaling - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1288
ISSN (Print)0277-786X

Other

OtherHigh-Speed Electronics and Device Scaling
CitySan Diego, CA, USA
Period3/18/903/19/90

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Rosenbaum, S. E., Nguyen, L. D., Solomon, P. M., Kiehl, R., & Kwark, Y. H. (1990). Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. In L. F. Eastman (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 21-29). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1288). Publ by Int Soc for Optical Engineering.