Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length

U. K. Mishra, A. S. Brown, L. M. Jelloian, M. Thompson, S. E. Rosenbaum, L. D. Nguyen, P. M. Solomon, Richard Kiehl, Y. H. Kwark

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsLester F. Eastman
PublisherPubl by Int Soc for Optical Engineering
Pages21-29
Number of pages9
Volume1288
ISBN (Print)0819403393
StatePublished - 1990
Externally publishedYes
EventHigh-Speed Electronics and Device Scaling - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Other

OtherHigh-Speed Electronics and Device Scaling
CitySan Diego, CA, USA
Period3/18/903/19/90

Fingerprint

Plasma deposition
High electron mobility transistors
high electron mobility transistors
Cryogenics
cryogenics
Oxides
room temperature
damage
Temperature
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Rosenbaum, S. E., Nguyen, L. D., ... Kwark, Y. H. (1990). Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. In L. F. Eastman (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1288, pp. 21-29). Publ by Int Soc for Optical Engineering.

Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. / Mishra, U. K.; Brown, A. S.; Jelloian, L. M.; Thompson, M.; Rosenbaum, S. E.; Nguyen, L. D.; Solomon, P. M.; Kiehl, Richard; Kwark, Y. H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Lester F. Eastman. Vol. 1288 Publ by Int Soc for Optical Engineering, 1990. p. 21-29.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mishra, UK, Brown, AS, Jelloian, LM, Thompson, M, Rosenbaum, SE, Nguyen, LD, Solomon, PM, Kiehl, R & Kwark, YH 1990, Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. in LF Eastman (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1288, Publ by Int Soc for Optical Engineering, pp. 21-29, High-Speed Electronics and Device Scaling, San Diego, CA, USA, 3/18/90.
Mishra UK, Brown AS, Jelloian LM, Thompson M, Rosenbaum SE, Nguyen LD et al. Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. In Eastman LF, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1288. Publ by Int Soc for Optical Engineering. 1990. p. 21-29
Mishra, U. K. ; Brown, A. S. ; Jelloian, L. M. ; Thompson, M. ; Rosenbaum, S. E. ; Nguyen, L. D. ; Solomon, P. M. ; Kiehl, Richard ; Kwark, Y. H. / Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. Proceedings of SPIE - The International Society for Optical Engineering. editor / Lester F. Eastman. Vol. 1288 Publ by Int Soc for Optical Engineering, 1990. pp. 21-29
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