Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length

U. K. Mishra; A. S. Brown; L. M. Jelloian; M. Thompson; S. E. Rosenbaum; L. D. Nguyen; P. M. Solomon; R. Kiehl; Y. H. Kwark

Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length

U. K. Mishra, A. S. Brown, L. M. Jelloian, M. Thompson, S. E. Rosenbaum, L. D. Nguyen, P. M. Solomon, R. Kiehl, Y. H. Kwark

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an f_T of 177 GHz whereas devices with no sidewall exhibited an f_T greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO₂. An extrinsic f_T of 292 GHz was measured at 77K.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Lester F. Eastman
Publisher	Publ by Int Soc for Optical Engineering
Pages	21-29
Number of pages	9
ISBN (Print)	0819403393
State	Published - 1990
Externally published	Yes
Event	High-Speed Electronics and Device Scaling - San Diego, CA, USA Duration: Mar 18 1990 → Mar 19 1990

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1288
ISSN (Print)	0277-786X

Other

Other	High-Speed Electronics and Device Scaling
City	San Diego, CA, USA
Period	3/18/90 → 3/19/90

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Rosenbaum, S. E., Nguyen, L. D., Solomon, P. M., Kiehl, R., & Kwark, Y. H. (1990). Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. In L. F. Eastman (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 21-29). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1288). Publ by Int Soc for Optical Engineering.

Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. / Mishra, U. K.; Brown, A. S.; Jelloian, L. M. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Lester F. Eastman. Publ by Int Soc for Optical Engineering, 1990. p. 21-29 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1288).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mishra, UK, Brown, AS, Jelloian, LM, Thompson, M, Rosenbaum, SE, Nguyen, LD, Solomon, PM, Kiehl, R & Kwark, YH 1990, Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. in LF Eastman (ed.), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1288, Publ by Int Soc for Optical Engineering, pp. 21-29, High-Speed Electronics and Device Scaling, San Diego, CA, USA, 3/18/90.

Mishra UK, Brown AS, Jelloian LM, Thompson M, Rosenbaum SE, Nguyen LD et al. Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. In Eastman LF, editor, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1990. p. 21-29. (Proceedings of SPIE - The International Society for Optical Engineering).

Mishra, U. K. ; Brown, A. S. ; Jelloian, L. M. et al. / Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. Proceedings of SPIE - The International Society for Optical Engineering. editor / Lester F. Eastman. Publ by Int Soc for Optical Engineering, 1990. pp. 21-29 (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length",

abstract = "A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.",

author = "Mishra, {U. K.} and Brown, {A. S.} and Jelloian, {L. M.} and M. Thompson and Rosenbaum, {S. E.} and Nguyen, {L. D.} and Solomon, {P. M.} and R. Kiehl and Kwark, {Y. H.}",

year = "1990",

language = "English (US)",

isbn = "0819403393",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Brown, A. S.

AU - Jelloian, L. M.

AU - Thompson, M.

AU - Rosenbaum, S. E.

AU - Nguyen, L. D.

AU - Solomon, P. M.

AU - Kiehl, R.

AU - Kwark, Y. H.

PY - 1990

Y1 - 1990

N2 - A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.

AB - A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.

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M3 - Conference contribution

AN - SCOPUS:0025665845

SN - 0819403393

T3 - Proceedings of SPIE - The International Society for Optical Engineering

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Eastman, Lester F.

PB - Publ by Int Soc for Optical Engineering

T2 - High-Speed Electronics and Device Scaling

Y2 - 18 March 1990 through 19 March 1990

ER -

Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length

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