ROLE OF TRAPPED INTERSTITIALS DURING RAPID THERMAL ANNEALING.

S. J. Pennycook, R. J. Culbertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

During the rapid thermal annealing of ion implanted layers, trapped interstitials are responsible for transient enhanced dopant diffusion and the formation of a band of defects at the mean projected ion range. We describe the detailed nature and extent of these effects and show how they can be predicted in practice. Authors present a model which explains why trapping only occurs with group V implantation and describe double implantation experiments which confirm the model and show how the formation of projected range defects can be suppressed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsThomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
PublisherMaterials Research Soc
Pages37-48
Number of pages12
ISBN (Print)0931837170
StatePublished - Dec 1 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume52
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Pennycook, S. J., & Culbertson, R. J. (1986). ROLE OF TRAPPED INTERSTITIALS DURING RAPID THERMAL ANNEALING. In T. O. Sedgwick, T. E. Seidel, & B-Y. Tsaur (Eds.), Materials Research Society Symposia Proceedings (pp. 37-48). (Materials Research Society Symposia Proceedings; Vol. 52). Materials Research Soc.