Role of the buffer layer thickness on the formation of basal plane stacking faults in a -plane GaN epitaxy on r -sapphire

Z. H. Wu, A. M. Fischer, Fernando Ponce, T. Yokogawa, S. Yoshida, R. Kato

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The thickness of low temperature AlGaN buffer layers grown on r -sapphire substrates has been found to directly affect the crystalline structure of the buffer layer as well as the structural and optical properties of subsequently grown a -plane GaN films. A buffer layer with a thickness of 30 nm results in randomly distributed fine domains without extended defects. Increasing the thickness to 90 nm leads to a uniform and largely coalesced crystalline structure, with well-defined stacking faults. GaN films grown on the thinner buffer layer contain a lower density of larger stacking faults, and exhibit brighter stacking-fault luminescence as compared to films grown on thicker buffer layers. Our studies indicate that the optimum buffer layer thickness for growth of a -plane GaN is about 30 nm.

Original languageEnglish (US)
Article number011901
JournalApplied Physics Letters
Volume93
Issue number1
DOIs
StatePublished - 2008

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crystal defects
epitaxy
sapphire
buffers
luminescence
optical properties
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Role of the buffer layer thickness on the formation of basal plane stacking faults in a -plane GaN epitaxy on r -sapphire. / Wu, Z. H.; Fischer, A. M.; Ponce, Fernando; Yokogawa, T.; Yoshida, S.; Kato, R.

In: Applied Physics Letters, Vol. 93, No. 1, 011901, 2008.

Research output: Contribution to journalArticle

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