Role of quantization effects in the operation of ultrasmall MOSFETs and SOI device structures

The continued scaling of devices towards the ultimate limit of 50-nm MOSFET by the year 2007 necessitates the use of higher substrate doping densities in both conventional devices and in the alternative device technologies. The higher substrate doping density, on the other hand, gives rise to pronounced space quantization effects that must be taken into account when modeling these novel device structures. One way to include space quantization is via solution of the Schrödinger equation coupled to conventional drift-diffusion, hydrodynamic or Monte Carlo particle-based simulators. An alternative way is to use the recently proposed effective potential approach. In this work, we apply the effective potential approach when modeling a conventional 50-nm MOSFET device and an SOI device structure. For the SOI device we also utilize the Landauer's approach to calculate the current and estimate the device threshold voltage increase due to the lateral quantization.