Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-insulator material

J. C. Park, J. D. Lee, D. Venables, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The role of precipitation processes in defect development in high temperature implanted single and multiple implant/anneal SIMOX was studied by transmission electron microscopy. The differences in defect type, density and location were compared. The dominant defects in single implanted and annealed material are pairs of narrow stacking faults (NSFs) at a density of approx. 106 cm-2 while stacking fault pyramids (SFPs) at a similar density dominate multiple implant/anneal material. However, SFPs are confined to the buried oxide interface and thus the density of through-thickness defects is about two orders of magnitude lower in multiple implant (<104 cm-2) than in single implant material (approx. 106 cm-2). SFPs are formed from a collection of four NSFs pinned to residual oxide precipitates. This transformation is energetically possible only below a critical NSF length which is dictated by the relative location of the residual precipitates. In turn, the residual precipitate location is determined by the location of as-implanted defects on which SiO2 preferentially nucleates and grows. Thus, the synergistic interaction between precipitation and defect formation and evolution processes plays a key role in determining the final defect microstructure of SIMOX.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages153-158
Number of pages6
Volume279
ISBN (Print)1558991743
StatePublished - 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period11/30/9212/4/92

Fingerprint

Silicon
Stacking faults
Oxygen
Defects
Precipitates
Oxides
Transmission electron microscopy
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Park, J. C., Lee, J. D., Venables, D., Krause, S., & Roitman, P. (1993). Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-insulator material. In Materials Research Society Symposium Proceedings (Vol. 279, pp. 153-158). Pittsburgh, PA, United States: Publ by Materials Research Society.

Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-insulator material. / Park, J. C.; Lee, J. D.; Venables, D.; Krause, Stephen; Roitman, P.

Materials Research Society Symposium Proceedings. Vol. 279 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 153-158.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, JC, Lee, JD, Venables, D, Krause, S & Roitman, P 1993, Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-insulator material. in Materials Research Society Symposium Proceedings. vol. 279, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 153-158, Beam Solid Interactions: Fundamentals and Applications, Boston, MA, USA, 11/30/92.
Park JC, Lee JD, Venables D, Krause S, Roitman P. Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-insulator material. In Materials Research Society Symposium Proceedings. Vol. 279. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 153-158
Park, J. C. ; Lee, J. D. ; Venables, D. ; Krause, Stephen ; Roitman, P. / Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-insulator material. Materials Research Society Symposium Proceedings. Vol. 279 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 153-158
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