TY - JOUR
T1 - Role of Ni and Zr doping on the electrical, optical, magnetic, and structural properties of barium zinc tantalate ceramics
AU - Rong, G.
AU - Newman, N.
AU - Shaw, B.
AU - Cronin, D.
N1 - Funding Information:
The authors gratefully acknowledge the contract monitor J. Fiedziuszko for his continuing encouragement and support throughout the work. We thank Trans-Tech for supplying the ceramic samples used in this study. We also thank Dr. Mike Hill, Dr. David Cruickshank, Prof. Bill Spicer, and Dr. Mark van Schilfgaarde for helpful discussions. We acknowledge the use of the exemplary facilities within the National Science Foundation-supported Material Research Center and the Chemistry Analytic Laboratory at Northwestern University. This work was supported by Loral Space Systems.
PY - 1999/10
Y1 - 1999/10
N2 - Properties of Ni- and Zr-doped Ba(Zn1/3Ta2/3)O3 ceramics are reported. The nickel ion has an effective paramagnetic moment of 3.22±0.05. Optical spectra of Ni-doped Ba(Zn1/3Ta2/3)O3 are dominated by discrete internal transitions between Ni2+ 3d orbitals. Absorption from the 3Γ2(F) ground state to 4Γ3(F), 3Γ1(D), 5Γ1(D), 4Γ3(P) excited states occurs at approximately 1.55, 1.75, 2.50, and 2.80 eV, respectively. The ligand field strength of neighboring oxygen ions ranges from about 7300 cm-1 (0.25% Ni) to about 7700 cm-1 (1.0% Ni). A significant increase in the visible continuum background is correlated with increased tan δ. This effect is attributed to point defects in the Ni environment, suggesting that point defects play an important role in microwave loss in practical dielectric material.
AB - Properties of Ni- and Zr-doped Ba(Zn1/3Ta2/3)O3 ceramics are reported. The nickel ion has an effective paramagnetic moment of 3.22±0.05. Optical spectra of Ni-doped Ba(Zn1/3Ta2/3)O3 are dominated by discrete internal transitions between Ni2+ 3d orbitals. Absorption from the 3Γ2(F) ground state to 4Γ3(F), 3Γ1(D), 5Γ1(D), 4Γ3(P) excited states occurs at approximately 1.55, 1.75, 2.50, and 2.80 eV, respectively. The ligand field strength of neighboring oxygen ions ranges from about 7300 cm-1 (0.25% Ni) to about 7700 cm-1 (1.0% Ni). A significant increase in the visible continuum background is correlated with increased tan δ. This effect is attributed to point defects in the Ni environment, suggesting that point defects play an important role in microwave loss in practical dielectric material.
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U2 - 10.1557/JMR.1999.0542
DO - 10.1557/JMR.1999.0542
M3 - Article
AN - SCOPUS:0033276802
SN - 0884-2914
VL - 14
SP - 4011
EP - 4019
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 10
ER -