Abstract
Devices are now controlled by strong size-related effects: coupling to the environment of contacts, interfaces/boundaries/surfaces, interconnects, and other devices. This is especially the case in MOSFET's, where remote interface phonons and surface roughness scattering dominate transport. A general treatment of device-environment interaction is discussed. Special cases for MOS transport and the specific role of interfaces are treated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 504-509 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1984 |
| Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA Duration: Jan 31 1984 → Feb 2 1984 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering