Role of hot carriers in the interfacial transport in amorphous silicon/crystalline silicon heterostructure solar cells

Kunal Ghosh, Stuart Bowden, Clarence Tracy

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The transport of photogenerated minority carriers (photocarriers) across the heterointerface of amorphous silicon (a-Si) and crystalline silicon (c-Si) in a-Si/c-Si heterostructure solar cell is shown in this work to critically depend on the non-Maxwellian energy distribution function (EDF) of those carriers impinging on the heterointerface. A theoretical model is presented that integrates the effect of the high electric field inversion region upon EDF of the impinging carriers with the transmission probability of those carriers across the heterointerface. The transport of the photocarriers across the high electric field inversion region is simulated by the full solution of the Boltzmann transport equation by Monte Carlo (MC) technique while the transmission probability of carriers across the heterointerface is calculated through the percolation path technique. The results are discussed under two different condition of band bending; strongly inverted and weakly inverted c-Si surface. The results comparing different conditions of band bending show that the energy distribution of the carriers impinging on the heterointerface is non-Maxwellian and the integrated photocarrier collection increases with the strength of the inversion field since the carrier population is weighted toward higher energy where the transmission probability through the barrier is higher. Thus, we demonstrate that hot carriers play an important role in heterostructure cell operation.

Original languageEnglish (US)
Pages (from-to)413-419
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number2
DOIs
StatePublished - Feb 2013

Fingerprint

Hot carriers
Silicon
Amorphous silicon
amorphous silicon
Heterojunctions
Solar cells
solar cells
Crystalline materials
Distribution functions
Electric fields
minority carriers
energy distribution
inversions
distribution functions
Boltzmann transport equation
electric fields
silicon
cells

Keywords

  • a-Si/c-Si heterostructures
  • ensemble Monte Carlo calculation
  • photovoltaics
  • transmission probabilities

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "The transport of photogenerated minority carriers (photocarriers) across the heterointerface of amorphous silicon (a-Si) and crystalline silicon (c-Si) in a-Si/c-Si heterostructure solar cell is shown in this work to critically depend on the non-Maxwellian energy distribution function (EDF) of those carriers impinging on the heterointerface. A theoretical model is presented that integrates the effect of the high electric field inversion region upon EDF of the impinging carriers with the transmission probability of those carriers across the heterointerface. The transport of the photocarriers across the high electric field inversion region is simulated by the full solution of the Boltzmann transport equation by Monte Carlo (MC) technique while the transmission probability of carriers across the heterointerface is calculated through the percolation path technique. The results are discussed under two different condition of band bending; strongly inverted and weakly inverted c-Si surface. The results comparing different conditions of band bending show that the energy distribution of the carriers impinging on the heterointerface is non-Maxwellian and the integrated photocarrier collection increases with the strength of the inversion field since the carrier population is weighted toward higher energy where the transmission probability through the barrier is higher. Thus, we demonstrate that hot carriers play an important role in heterostructure cell operation.",
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T1 - Role of hot carriers in the interfacial transport in amorphous silicon/crystalline silicon heterostructure solar cells

AU - Ghosh, Kunal

AU - Bowden, Stuart

AU - Tracy, Clarence

PY - 2013/2

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N2 - The transport of photogenerated minority carriers (photocarriers) across the heterointerface of amorphous silicon (a-Si) and crystalline silicon (c-Si) in a-Si/c-Si heterostructure solar cell is shown in this work to critically depend on the non-Maxwellian energy distribution function (EDF) of those carriers impinging on the heterointerface. A theoretical model is presented that integrates the effect of the high electric field inversion region upon EDF of the impinging carriers with the transmission probability of those carriers across the heterointerface. The transport of the photocarriers across the high electric field inversion region is simulated by the full solution of the Boltzmann transport equation by Monte Carlo (MC) technique while the transmission probability of carriers across the heterointerface is calculated through the percolation path technique. The results are discussed under two different condition of band bending; strongly inverted and weakly inverted c-Si surface. The results comparing different conditions of band bending show that the energy distribution of the carriers impinging on the heterointerface is non-Maxwellian and the integrated photocarrier collection increases with the strength of the inversion field since the carrier population is weighted toward higher energy where the transmission probability through the barrier is higher. Thus, we demonstrate that hot carriers play an important role in heterostructure cell operation.

AB - The transport of photogenerated minority carriers (photocarriers) across the heterointerface of amorphous silicon (a-Si) and crystalline silicon (c-Si) in a-Si/c-Si heterostructure solar cell is shown in this work to critically depend on the non-Maxwellian energy distribution function (EDF) of those carriers impinging on the heterointerface. A theoretical model is presented that integrates the effect of the high electric field inversion region upon EDF of the impinging carriers with the transmission probability of those carriers across the heterointerface. The transport of the photocarriers across the high electric field inversion region is simulated by the full solution of the Boltzmann transport equation by Monte Carlo (MC) technique while the transmission probability of carriers across the heterointerface is calculated through the percolation path technique. The results are discussed under two different condition of band bending; strongly inverted and weakly inverted c-Si surface. The results comparing different conditions of band bending show that the energy distribution of the carriers impinging on the heterointerface is non-Maxwellian and the integrated photocarrier collection increases with the strength of the inversion field since the carrier population is weighted toward higher energy where the transmission probability through the barrier is higher. Thus, we demonstrate that hot carriers play an important role in heterostructure cell operation.

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KW - ensemble Monte Carlo calculation

KW - photovoltaics

KW - transmission probabilities

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