Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

Nadir Hossain; Konstanze Hild; Shirong Jin; Stephen J. Sweeney; Shui Qing Yu; Shane Johnson; Ding Ding; Yong-Hang Zhang

doi:10.1109/PHOTONICS.2010.5698756

Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

Nadir Hossain, Konstanze Hild, Shirong Jin, Stephen J. Sweeney, Shui Qing Yu, Shane Johnson, Ding Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low J^th/QW of 138A/cm² at RT.

Original language	English (US)
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	59-60
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698756
State	Published - Dec 1 2010
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: Nov 7 2010 → Nov 11 2010

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	11/7/10 → 11/11/10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/PHOTONICS.2010.5698756

Cite this

Hossain, N., Hild, K., Jin, S., Sweeney, S. J., Yu, S. Q., Johnson, S., Ding, D., & Zhang, Y-H. (2010). Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 59-60). [5698756] (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698756

Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers. / Hossain, Nadir; Hild, Konstanze; Jin, Shirong et al.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 59-60 5698756 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hossain, N, Hild, K, Jin, S, Sweeney, SJ, Yu, SQ, Johnson, S, Ding, D & Zhang, Y-H 2010, Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698756, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 59-60, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 11/7/10. https://doi.org/10.1109/PHOTONICS.2010.5698756

@inproceedings{f70d77049d24479a96f7a0916d164fc3,

title = "Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers",

abstract = "Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.",

author = "Nadir Hossain and Konstanze Hild and Shirong Jin and Sweeney, {Stephen J.} and Yu, {Shui Qing} and Shane Johnson and Ding Ding and Yong-Hang Zhang",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/PHOTONICS.2010.5698756",

language = "English (US)",

isbn = "9781424453689",

series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

pages = "59--60",

booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",

}

TY - GEN

T1 - Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

AU - Hossain, Nadir

AU - Hild, Konstanze

AU - Jin, Shirong

AU - Sweeney, Stephen J.

AU - Yu, Shui Qing

AU - Johnson, Shane

AU - Ding, Ding

AU - Zhang, Yong-Hang

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.

AB - Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.

UR - http://www.scopus.com/inward/record.url?scp=79951864406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951864406&partnerID=8YFLogxK

U2 - 10.1109/PHOTONICS.2010.5698756

DO - 10.1109/PHOTONICS.2010.5698756

M3 - Conference contribution

AN - SCOPUS:79951864406

SN - 9781424453689

T3 - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

SP - 59

EP - 60

BT - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

T2 - 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Y2 - 7 November 2010 through 11 November 2010

ER -

Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

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