Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

Nadir Hossain, Konstanze Hild, Shirong Jin, Stephen J. Sweeney, Shui Qing Yu, Shane Johnson, Ding Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.

Original languageEnglish (US)
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages59-60
Number of pages2
DOIs
StatePublished - Dec 1 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: Nov 7 2010Nov 11 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period11/7/1011/11/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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