Abstract

Results of extensive density-functional studies provide direct evidence that Cr atoms in Crâ¶GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06â€"1.47ÎμB/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.

Original languageEnglish (US)
Article number256404
JournalPhysical Review Letters
Volume95
Issue number25
DOIs
StatePublished - Dec 16 2005

Fingerprint

statistical distributions
atoms
tendencies
magnetic properties
configurations

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Role of embedded clustering in dilute magnetic semiconductors : Cr doped GaN. / Cui, X. Y.; Medvedeva, J. E.; Delley, B.; Freeman, A. J.; Newman, Nathan; Stampfl, C.

In: Physical Review Letters, Vol. 95, No. 25, 256404, 16.12.2005.

Research output: Contribution to journalArticle

Cui, X. Y. ; Medvedeva, J. E. ; Delley, B. ; Freeman, A. J. ; Newman, Nathan ; Stampfl, C. / Role of embedded clustering in dilute magnetic semiconductors : Cr doped GaN. In: Physical Review Letters. 2005 ; Vol. 95, No. 25.
@article{449cfe7eaa7f4d5a984436cd0d917c8e,
title = "Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN",
abstract = "Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr{\^a}¶GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06{\^a}€{"}1.47{\^I}μB/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.",
author = "Cui, {X. Y.} and Medvedeva, {J. E.} and B. Delley and Freeman, {A. J.} and Nathan Newman and C. Stampfl",
year = "2005",
month = "12",
day = "16",
doi = "10.1103/PhysRevLett.95.256404",
language = "English (US)",
volume = "95",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "25",

}

TY - JOUR

T1 - Role of embedded clustering in dilute magnetic semiconductors

T2 - Cr doped GaN

AU - Cui, X. Y.

AU - Medvedeva, J. E.

AU - Delley, B.

AU - Freeman, A. J.

AU - Newman, Nathan

AU - Stampfl, C.

PY - 2005/12/16

Y1 - 2005/12/16

N2 - Results of extensive density-functional studies provide direct evidence that Cr atoms in Crâ¶GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06â€"1.47ÎμB/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.

AB - Results of extensive density-functional studies provide direct evidence that Cr atoms in Crâ¶GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06â€"1.47ÎμB/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=29144523942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29144523942&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.95.256404

DO - 10.1103/PhysRevLett.95.256404

M3 - Article

VL - 95

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 25

M1 - 256404

ER -