Abstract

Here we report simulation results for high-frequency, high-power state-of-the-art GaN High Electron Mobility Transistors (HEMTs), using a full band Cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra, in order to study the RF performance of the new promising technology available nowadays. A complete characterization of an InGaN back - barrier device has been performed using experimental data to calibrate the few adjustable parameters of the simulator. Furthermore, a study on a device structure based on the N-face configuration was performed. Finally, threading dislocation effects on HEMT device transport properties were investigated.

Original languageEnglish (US)
Pages (from-to)2445-2449
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number10
DOIs
StatePublished - Oct 1 2010

Keywords

  • GaN HEMT
  • Monte-Carlo simulation
  • Performance
  • Transport properties

ASJC Scopus subject areas

  • Condensed Matter Physics

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