Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design

Brian R. Wier, Rafael Perez Martinez, Uppili S. Raghunathar, Hanbin Ying, Saeed Zeinolabedinzadeh, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper presents and validates a physics-based compact aging model for predictive simulation of hot-carrier degradation in SiGe HBTs. Separate aging functions model the effects of high-field mixed-mode and high-current Auger-hot-carrier stresses and are integrated together to provide predictive capability across a wide bias range. The variation of aging rate with device geometry and the incorporation of multiple parameter shifts due to hot carrier polysilicon degradation are explored. Additionally, aging simulation results of a driver circuit are presented to begin to demonstrate how such models may be incorporated as part of the circuit design process.

Original languageEnglish (US)
Title of host publication2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages215-218
Number of pages4
ISBN (Electronic)9781538665022
DOIs
StatePublished - Nov 27 2018
Externally publishedYes
Event2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States
Duration: Oct 15 2018Oct 17 2018

Publication series

Name2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018

Conference

Conference2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
CountryUnited States
CitySan Diego
Period10/15/1810/17/18

Keywords

  • High-current stress
  • Mixed-mode stress
  • Reliability
  • Safe operating area
  • SiGe HBT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

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