@inproceedings{321de619de054924af9792fd68ed21cb,
title = "Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design",
abstract = "This paper presents and validates a physics-based compact aging model for predictive simulation of hot-carrier degradation in SiGe HBTs. Separate aging functions model the effects of high-field mixed-mode and high-current Auger-hot-carrier stresses and are integrated together to provide predictive capability across a wide bias range. The variation of aging rate with device geometry and the incorporation of multiple parameter shifts due to hot carrier polysilicon degradation are explored. Additionally, aging simulation results of a driver circuit are presented to begin to demonstrate how such models may be incorporated as part of the circuit design process.",
keywords = "High-current stress, Mixed-mode stress, Reliability, Safe operating area, SiGe HBT",
author = "Wier, {Brian R.} and Martinez, {Rafael Perez} and Raghunathar, {Uppili S.} and Hanbin Ying and Saeed Zeinolabedinzadeh and Cressler, {John D.}",
note = "Funding Information: ACKNOWLEDGMENT This work was funded in part by Inphi Corporation. The authors are grateful for the contributions of T. Mukherjee and S. Nielsen. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 ; Conference date: 15-10-2018 Through 17-10-2018",
year = "2018",
month = nov,
day = "27",
doi = "10.1109/BCICTS.2018.8551087",
language = "English (US)",
series = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "215--218",
booktitle = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018",
}