Abstract

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers' interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

Original languageEnglish (US)
Article number083002
JournalSemiconductor Science and Technology
Volume32
Issue number8
DOIs
StatePublished - Jul 3 2017

Fingerprint

Radiation effects
random access memory
radiation effects
Data storage equipment
resilience
ionizing radiation
Ionizing radiation
dosage
radiation belts
Radiation belts
flash
cosmic rays
Cosmic rays
valence
Space applications
Random access storage
Embedded systems
causes
radiation
electronics

Keywords

  • CBRAM
  • radiation effects
  • ReRAM
  • resistance switching
  • singleevent effects
  • total dose
  • VCM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Review of radiation effects on ReRAM devices and technology. / Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael.

In: Semiconductor Science and Technology, Vol. 32, No. 8, 083002, 03.07.2017.

Research output: Contribution to journalReview article

@article{58b024334d4d40768077360ed531661f,
title = "Review of radiation effects on ReRAM devices and technology",
abstract = "A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers' interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.",
keywords = "CBRAM, radiation effects, ReRAM, resistance switching, singleevent effects, total dose, VCM",
author = "{Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki",
year = "2017",
month = "7",
day = "3",
doi = "10.1088/1361-6641/aa6124",
language = "English (US)",
volume = "32",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "8",

}

TY - JOUR

T1 - Review of radiation effects on ReRAM devices and technology

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

PY - 2017/7/3

Y1 - 2017/7/3

N2 - A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers' interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

AB - A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers' interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

KW - CBRAM

KW - radiation effects

KW - ReRAM

KW - resistance switching

KW - singleevent effects

KW - total dose

KW - VCM

UR - http://www.scopus.com/inward/record.url?scp=85026382451&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026382451&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aa6124

DO - 10.1088/1361-6641/aa6124

M3 - Review article

AN - SCOPUS:85026382451

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

M1 - 083002

ER -