Review of physics-based compact models for emerging nonvolatile memories

Nuo Xu, Pai Yu Chen, Jing Wang, Woosung Choi, Keun Ho Lee, Eun Seung Jung, Shimeng Yu

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development.

Original languageEnglish (US)
Pages (from-to)1-13
Number of pages13
JournalJournal of Computational Electronics
DOIs
StateAccepted/In press - Oct 27 2017

Keywords

  • 1T1R
  • Compact modeling
  • Cross-point
  • GST
  • Nonvolatile memory (NVM )
  • OTS
  • PCM
  • Reaction rate equation (RRE )
  • RRAM
  • STT-MRAM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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  • Cite this

    Xu, N., Chen, P. Y., Wang, J., Choi, W., Lee, K. H., Jung, E. S., & Yu, S. (Accepted/In press). Review of physics-based compact models for emerging nonvolatile memories. Journal of Computational Electronics, 1-13. https://doi.org/10.1007/s10825-017-1098-0