Review of physics-based compact models for emerging nonvolatile memories

Nuo Xu; Pai Yu Chen; Jing Wang; Woosung Choi; Keun Ho Lee; Eun Seung Jung; Shimeng Yu

doi:10.1007/s10825-017-1098-0

Review of physics-based compact models for emerging nonvolatile memories

Nuo Xu, Pai Yu Chen, Jing Wang, Woosung Choi, Keun Ho Lee, Eun Seung Jung, Shimeng Yu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development.

Original language	English (US)
Pages (from-to)	1257-1269
Number of pages	13
Journal	Journal of Computational Electronics
Volume	16
Issue number	4
DOIs	https://doi.org/10.1007/s10825-017-1098-0
State	Published - Dec 1 2017

Keywords

1T1R
Compact modeling
Cross-point
GST
Nonvolatile memory (NVM)
OTS
PCM
RRAM
Reaction rate equation (RRE)
STT-MRAM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-017-1098-0

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title = "Review of physics-based compact models for emerging nonvolatile memories",

abstract = "A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models{\textquoteright} good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development.",

keywords = "1T1R, Compact modeling, Cross-point, GST, Nonvolatile memory (NVM), OTS, PCM, RRAM, Reaction rate equation (RRE), STT-MRAM",

author = "Nuo Xu and Chen, {Pai Yu} and Jing Wang and Woosung Choi and Lee, {Keun Ho} and Jung, {Eun Seung} and Shimeng Yu",

note = "Funding Information: Acknowledgements N. Xu, J. Wang and W. Choi would like to thank the contribution from U. Monga, S.-C. Lee, J. Jeon, S. Ahn, Y. Lu, B. Fu, H.-H. Park, D. Apalkov from Samsung Electronics Ltd. and Y. Deng from Purdue University. P.-Y. Chen and S. Yu would like to thank for the support from NSF CCF-1449653. Publisher Copyright: {\textcopyright} 2017, Springer Science+Business Media, LLC.",

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doi = "10.1007/s10825-017-1098-0",

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AU - Xu, Nuo

AU - Chen, Pai Yu

AU - Wang, Jing

AU - Choi, Woosung

AU - Lee, Keun Ho

AU - Jung, Eun Seung

AU - Yu, Shimeng

N1 - Funding Information: Acknowledgements N. Xu, J. Wang and W. Choi would like to thank the contribution from U. Monga, S.-C. Lee, J. Jeon, S. Ahn, Y. Lu, B. Fu, H.-H. Park, D. Apalkov from Samsung Electronics Ltd. and Y. Deng from Purdue University. P.-Y. Chen and S. Yu would like to thank for the support from NSF CCF-1449653. Publisher Copyright: © 2017, Springer Science+Business Media, LLC.

PY - 2017/12/1

Y1 - 2017/12/1

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KW - Compact modeling

KW - Cross-point

KW - GST

KW - Nonvolatile memory (NVM)

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KW - RRAM

KW - Reaction rate equation (RRE)

KW - STT-MRAM

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Review of physics-based compact models for emerging nonvolatile memories

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Keywords

ASJC Scopus subject areas

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