Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits

Laurent Dusseau; Muriel Bernard; Jérôme Boch; Yago Gonzalez Velo; Nicolas Roche; Eric Lorfèvre; Françoise Bezerra; Philippe Calvel; Ronan Marec; Frédéric Saigne

doi:10.1109/TNS.2008.2006835

Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits

Laurent Dusseau, Muriel Bernard, Jérôme Boch, Yago Gonzalez Velo, Nicolas Roche, Eric Lorfèvre, Françoise Bezerra, Philippe Calvel, Ronan Marec, Frédéric Saigne

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.

Original language	English (US)
Article number	4723768
Pages (from-to)	3174-3181
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	55
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2008.2006835
State	Published - Dec 2008
Externally published	Yes

Keywords

Annealing
Bipolar transistors
Circuit effects
Dose rate
Integrated circuits (ICs)
Total dose

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2008.2006835

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Dusseau, L., Bernard, M., Boch, J., Gonzalez Velo, Y., Roche, N., Lorfèvre, E., Bezerra, F., Calvel, P., Marec, R., & Saigne, F. (2008). Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits. IEEE Transactions on Nuclear Science, 55(6), 3174-3181. Article 4723768. https://doi.org/10.1109/TNS.2008.2006835

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title = "Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits",

abstract = "It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.",

keywords = "Annealing, Bipolar transistors, Circuit effects, Dose rate, Integrated circuits (ICs), Total dose",

author = "Laurent Dusseau and Muriel Bernard and J{\'e}r{\^o}me Boch and {Gonzalez Velo}, Yago and Nicolas Roche and Eric Lorf{\`e}vre and Fran{\c c}oise Bezerra and Philippe Calvel and Ronan Marec and Fr{\'e}d{\'e}ric Saigne",

note = "Funding Information: Manuscript received July 07, 2008; revised August 28, 2008 and September 21, 2008. Current version published December 31, 2008. This work was supported by CNES.",

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language = "English (US)",

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AU - Dusseau, Laurent

AU - Bernard, Muriel

AU - Boch, Jérôme

AU - Gonzalez Velo, Yago

AU - Roche, Nicolas

AU - Lorfèvre, Eric

AU - Bezerra, Françoise

AU - Calvel, Philippe

AU - Marec, Ronan

AU - Saigne, Frédéric

N1 - Funding Information: Manuscript received July 07, 2008; revised August 28, 2008 and September 21, 2008. Current version published December 31, 2008. This work was supported by CNES.

PY - 2008/12

Y1 - 2008/12

N2 - It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.

AB - It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.

KW - Annealing

KW - Bipolar transistors

KW - Circuit effects

KW - Dose rate

KW - Integrated circuits (ICs)

KW - Total dose

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Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits

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Keywords

ASJC Scopus subject areas

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