Abstract

Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge<inf>40</inf>S<inf>60</inf> subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent "memory" effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved "memorized" during writing and erasing cycles. The "memorized" pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

Original languageEnglish (US)
Article number077134
JournalAIP Advances
Volume5
Issue number7
DOIs
StatePublished - Jul 1 2015

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silver
filaments
dissolving
geometry
electrodes
endurance
microelectromechanical systems
emerging
fractals
Raman spectroscopy
sampling
atomic force microscopy
electrolytes
solid state
cycles
electric fields
thin films
cells
metals
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reversible migration of silver on memorized pathways in Ag-Ge<inf>40</inf>S<inf>60</inf> films. / Orava, J.; Kozicki, Michael; Yannopoulos, S. N.; Greer, A. L.

In: AIP Advances, Vol. 5, No. 7, 077134, 01.07.2015.

Research output: Contribution to journalArticle

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