Reverse Recovery Behavior in Vertical Diamond Schottky Diodes

K. Woo, B. Shankar, M. Malakoutian, F. Koeck, R. Nemanich, Srabanti Chowdhury

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As an ultra-wide-bandgap material, diamond is an extremely attractive semiconductor for power electronic applications. The switching behavior in devices for power applications should be investigated to reduce significant energy losses. In this study, we have investigated the switching behavior in a vertical diamond Schottky barrier diode. The reverse recovery time was measured to be ~4-7 ns on average depending on the clamped inductive switching test setup. The diode was switched from a conducting current of as much as 948 A/cm2 to a blocking field up to 0.6 MV/cm. Very short reverse recovery times in addition to minimal changes in response to differing levels of on-state current, switching frequency, and temperature indicate a majority carrier diamond device as expected.

Original languageEnglish (US)
Title of host publication2022 Compound Semiconductor Week, CSW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665453400
DOIs
StatePublished - 2022
Externally publishedYes
Event2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States
Duration: Jun 1 2022Jun 3 2022

Publication series

Name2022 Compound Semiconductor Week, CSW 2022

Conference

Conference2022 Compound Semiconductor Week, CSW 2022
Country/TerritoryUnited States
CityAnn Arbor
Period6/1/226/3/22

Keywords

  • diamond Schottky diode
  • diamond semiconductor switching
  • reverse recovery

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Reverse Recovery Behavior in Vertical Diamond Schottky Diodes'. Together they form a unique fingerprint.

Cite this