TY - GEN
T1 - Reverse-body biasing for radiation-hard by design logic gates
AU - Clark, Lawrence T.
AU - Mohr, Karl C.
AU - Holbert, Keith
PY - 2007/9/25
Y1 - 2007/9/25
N2 - Different radiation hardening by design techniques for mitigating total ionizing dose (TID) effects in NMOS transistors are presented. NMOS annular layout transistors are compared to two-edge and hardened by reverse-body bias (RBB) with respect to CMOS gate area, delay, active and leakage power, and TID hardness. Accelerated testing using Co-60 irradiation of test structures on a 130 nm bulk CMOS process shows that RBB provides smaller devices and allows less chip-level leakage at 1 Mrad(Si) than a design hardened using annular gates has pre-irradiation. Simulations of fanout-of-four (F04) two-input NAND gates show that RBB provides an energy-delay product (EDP) comparable to conventional two-edge gates. Different annular topologies have EDP 35% to over 350% greater.
AB - Different radiation hardening by design techniques for mitigating total ionizing dose (TID) effects in NMOS transistors are presented. NMOS annular layout transistors are compared to two-edge and hardened by reverse-body bias (RBB) with respect to CMOS gate area, delay, active and leakage power, and TID hardness. Accelerated testing using Co-60 irradiation of test structures on a 130 nm bulk CMOS process shows that RBB provides smaller devices and allows less chip-level leakage at 1 Mrad(Si) than a design hardened using annular gates has pre-irradiation. Simulations of fanout-of-four (F04) two-input NAND gates show that RBB provides an energy-delay product (EDP) comparable to conventional two-edge gates. Different annular topologies have EDP 35% to over 350% greater.
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U2 - 10.1109/RELPHY.2007.369961
DO - 10.1109/RELPHY.2007.369961
M3 - Conference contribution
AN - SCOPUS:34548713486
SN - 1424409195
SN - 9781424409198
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 582
EP - 583
BT - 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
T2 - 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Y2 - 15 April 2007 through 19 April 2007
ER -