Reverse-body biasing for radiation-hard by design logic gates

Lawrence T. Clark, Karl C. Mohr, Keith Holbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Different radiation hardening by design techniques for mitigating total ionizing dose (TID) effects in NMOS transistors are presented. NMOS annular layout transistors are compared to two-edge and hardened by reverse-body bias (RBB) with respect to CMOS gate area, delay, active and leakage power, and TID hardness. Accelerated testing using Co-60 irradiation of test structures on a 130 nm bulk CMOS process shows that RBB provides smaller devices and allows less chip-level leakage at 1 Mrad(Si) than a design hardened using annular gates has pre-irradiation. Simulations of fanout-of-four (F04) two-input NAND gates show that RBB provides an energy-delay product (EDP) comparable to conventional two-edge gates. Different annular topologies have EDP 35% to over 350% greater.

Original languageEnglish (US)
Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages582-583
Number of pages2
DOIs
StatePublished - Sep 25 2007
Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
Duration: Apr 15 2007Apr 19 2007

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/15/074/19/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Clark, L. T., Mohr, K. C., & Holbert, K. (2007). Reverse-body biasing for radiation-hard by design logic gates. In 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual (pp. 582-583). [4227702] (Annual Proceedings - Reliability Physics (Symposium)). https://doi.org/10.1109/RELPHY.2007.369961