Retrograde melting and internal liquid gettering in silicon

Steve Hudelson, Bonna K. Newman, Sarah Bernardis, David P. Fenning, Mariana I. Bertoni, Matthew A. Marcus, Sirine C. Fakra, Barry Lai, Tonio Buonassisi

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

Original languageEnglish (US)
Pages (from-to)3948-3953
Number of pages6
JournalAdvanced Materials
Volume22
Issue number35
DOIs
StatePublished - Sep 15 2010
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hudelson, S., Newman, B. K., Bernardis, S., Fenning, D. P., Bertoni, M. I., Marcus, M. A., Fakra, S. C., Lai, B., & Buonassisi, T. (2010). Retrograde melting and internal liquid gettering in silicon. Advanced Materials, 22(35), 3948-3953. https://doi.org/10.1002/adma.200904344