Abstract

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages836-840
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Gallium phosphide
Monocrystalline silicon
Silicon
Solar cells
Electrons
Texturing
Point contacts
Open circuit voltage
Substrates
Silver
Passivation
Oxides
gallium phosphide
thiazole-4-carboxamide adenine dinucleotide

Keywords

  • heterojunctions
  • p-n junctions
  • photovoltaic cells
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Limpert, S., Ghosh, K., Wagner, H., Bowden, S., Honsberg, C., Goodnick, S., ... Green, M. (2014). Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 836-840). [6925045] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925045

Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. / Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Ho-Baillie, Anita; Green, Martin.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 836-840 6925045.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Limpert, S, Ghosh, K, Wagner, H, Bowden, S, Honsberg, C, Goodnick, S, Bremner, S, Ho-Baillie, A & Green, M 2014, Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925045, Institute of Electrical and Electronics Engineers Inc., pp. 836-840, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925045
Limpert S, Ghosh K, Wagner H, Bowden S, Honsberg C, Goodnick S et al. Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 836-840. 6925045 https://doi.org/10.1109/PVSC.2014.6925045
Limpert, Steven ; Ghosh, Kunal ; Wagner, Hannes ; Bowden, Stuart ; Honsberg, Christiana ; Goodnick, Stephen ; Bremner, Stephen ; Ho-Baillie, Anita ; Green, Martin. / Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 836-840
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