Abstract
We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.
Original language | English (US) |
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Title of host publication | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 836-840 |
Number of pages | 5 |
ISBN (Print) | 9781479943982 |
DOIs | |
State | Published - Oct 15 2014 |
Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014 |
Other
Other | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
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Country | United States |
City | Denver |
Period | 6/8/14 → 6/13/14 |
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Keywords
- heterojunctions
- p-n junctions
- photovoltaic cells
- silicon
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. / Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Ho-Baillie, Anita; Green, Martin.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 836-840 6925045.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell
AU - Limpert, Steven
AU - Ghosh, Kunal
AU - Wagner, Hannes
AU - Bowden, Stuart
AU - Honsberg, Christiana
AU - Goodnick, Stephen
AU - Bremner, Stephen
AU - Ho-Baillie, Anita
AU - Green, Martin
PY - 2014/10/15
Y1 - 2014/10/15
N2 - We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.
AB - We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.
KW - heterojunctions
KW - p-n junctions
KW - photovoltaic cells
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84912074320&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912074320&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925045
DO - 10.1109/PVSC.2014.6925045
M3 - Conference contribution
AN - SCOPUS:84912074320
SN - 9781479943982
SP - 836
EP - 840
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -