Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

Steven Limpert; Kunal Ghosh; Hannes Wagner; Stuart Bowden; Christiana Honsberg; Stephen Goodnick; Stephen Bremner; Anita Ho-Baillie; Martin Green

doi:10.1109/PVSC.2014.6925045

Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

Steven Limpert, Kunal Ghosh, Hannes Wagner, Stuart Bowden, Christiana Honsberg, Stephen Goodnick, Stephen Bremner, Anita Ho-Baillie, Martin Green

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO₂/Al₂O₃ rear oxide passivation stack.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	836-840
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925045
State	Published - Oct 15 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country	United States
City	Denver
Period	6/8/14 → 6/13/14

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Keywords

heterojunctions
p-n junctions
photovoltaic cells
silicon

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Limpert, S., Ghosh, K., Wagner, H., Bowden, S., Honsberg, C., Goodnick, S., Bremner, S., Ho-Baillie, A., & Green, M. (2014). Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 836-840). [6925045] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925045

Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. / Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart ; Honsberg, Christiana ; Goodnick, Stephen; Bremner, Stephen; Ho-Baillie, Anita; Green, Martin.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 836-840 6925045 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Limpert, S, Ghosh, K, Wagner, H, Bowden, S , Honsberg, C , Goodnick, S, Bremner, S, Ho-Baillie, A & Green, M 2014, Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925045, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 836-840, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925045

Limpert S, Ghosh K, Wagner H, Bowden S , Honsberg C , Goodnick S et al. Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 836-840. 6925045. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). https://doi.org/10.1109/PVSC.2014.6925045

Limpert, Steven ; Ghosh, Kunal ; Wagner, Hannes ; Bowden, Stuart ; Honsberg, Christiana ; Goodnick, Stephen ; Bremner, Stephen ; Ho-Baillie, Anita ; Green, Martin. / Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 836-840 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

@inproceedings{feca9566e57646439b402dfd93e685e8,

title = "Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell",

abstract = "We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.",

keywords = "heterojunctions, p-n junctions, photovoltaic cells, silicon",

author = "Steven Limpert and Kunal Ghosh and Hannes Wagner and Stuart Bowden and Christiana Honsberg and Stephen Goodnick and Stephen Bremner and Anita Ho-Baillie and Martin Green",

year = "2014",

month = oct

day = "15",

doi = "10.1109/PVSC.2014.6925045",

language = "English (US)",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "836--840",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

}

TY - GEN

T1 - Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell

AU - Limpert, Steven

AU - Ghosh, Kunal

AU - Wagner, Hannes

AU - Bowden, Stuart

AU - Honsberg, Christiana

AU - Goodnick, Stephen

AU - Bremner, Stephen

AU - Ho-Baillie, Anita

AU - Green, Martin

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.

AB - We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.

KW - heterojunctions

KW - p-n junctions

KW - photovoltaic cells

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84912074320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912074320&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925045

DO - 10.1109/PVSC.2014.6925045

M3 - Conference contribution

AN - SCOPUS:84912074320

T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 836

EP - 840

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Access to Document

10.1109/PVSC.2014.6925045