Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"

P. J. Hartlieb, A. Roskowski, R. F. Davis, W. Platow, Robert Nemanich

Research output: Contribution to journalArticle

Abstract

The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.

Original languageEnglish (US)
Pages (from-to)3679
Number of pages1
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
StatePublished - Mar 15 2003
Externally publishedYes

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vapors
ammonia
valence
cleaning
electronic structure

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]". / Hartlieb, P. J.; Roskowski, A.; Davis, R. F.; Platow, W.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 93, No. 6, 15.03.2003, p. 3679.

Research output: Contribution to journalArticle

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AU - Nemanich, Robert

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