Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"

P. J. Hartlieb; A. Roskowski; R. F. Davis; W. Platow; Robert Nemanich

doi:10.1063/1.1542911

Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"

P. J. Hartlieb, A. Roskowski, R. F. Davis, W. Platow, Robert Nemanich

Research output: Contribution to journal › Article

Abstract

The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.

Original language	English (US)
Pages (from-to)	3679
Number of pages	1
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1542911
State	Published - Mar 15 2003
Externally published	Yes

Fingerprint

vapors

ammonia

valence

cleaning

electronic structure

ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

Cite this

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. (2003). Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]". Journal of Applied Physics, 93(6), 3679. https://doi.org/10.1063/1.1542911

Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]". / Hartlieb, P. J.; Roskowski, A.; Davis, R. F.; Platow, W.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 93, No. 6, 15.03.2003, p. 3679.

Research output: Contribution to journal › Article

Hartlieb, PJ, Roskowski, A, Davis, RF, Platow, W & Nemanich, R 2003, 'Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"', Journal of Applied Physics, vol. 93, no. 6, pp. 3679. https://doi.org/10.1063/1.1542911

Hartlieb PJ, Roskowski A, Davis RF, Platow W, Nemanich R. Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]". Journal of Applied Physics. 2003 Mar 15;93(6):3679. https://doi.org/10.1063/1.1542911

Hartlieb, P. J. ; Roskowski, A. ; Davis, R. F. ; Platow, W. ; Nemanich, Robert. / Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]". In: Journal of Applied Physics. 2003 ; Vol. 93, No. 6. pp. 3679.

@article{ba99a0ff71bd427db329a93ceb717082,

title = "Response to {"}comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]{"}",

abstract = "The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.",

author = "Hartlieb, {P. J.} and A. Roskowski and Davis, {R. F.} and W. Platow and Robert Nemanich",

year = "2003",

month = "3",

day = "15",

doi = "10.1063/1.1542911",

language = "English (US)",

volume = "93",

pages = "3679",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"

AU - Hartlieb, P. J.

AU - Roskowski, A.

AU - Davis, R. F.

AU - Platow, W.

AU - Nemanich, Robert

PY - 2003/3/15

Y1 - 2003/3/15

N2 - The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.

AB - The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.

UR - http://www.scopus.com/inward/record.url?scp=0345382827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345382827&partnerID=8YFLogxK

U2 - 10.1063/1.1542911

DO - 10.1063/1.1542911

M3 - Article

AN - SCOPUS:0345382827

VL - 93

SP - 3679

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -

Access to Document

10.1063/1.1542911