Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"

The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.