Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"

P. J. Hartlieb, A. Roskowski, R. F. Davis, W. Platow, R. J. Nemanich

Research output: Contribution to journalReview article

Abstract

The response to comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' was presented. It was established that the GaN surface prepared with an ammonia clean exhibited a valence band edge that was not obscured by he substantial surface state band often detected after other cleaning techniques. Electronic structure observed at the valence band edge was found to be influenced by the presence of adsorbed ammonia, but the adsorbates did not apparently contributed occupied states in the GaN band gap.

Original languageEnglish (US)
Number of pages1
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
StatePublished - Mar 15 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Response to "comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 93, 3677 (2002)]"'. Together they form a unique fingerprint.

  • Cite this