Response to "comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'" [solid state electron. 2004;48

335-8]

Meng Tao, J. Zhu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.

Original languageEnglish (US)
Pages (from-to)2351-2352
Number of pages2
JournalSolid-State Electronics
Volume48
Issue number12
DOIs
StatePublished - Dec 2004
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
Titanium
Electron energy levels
electric contacts
titanium
solid state
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Response to {"}comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'{"} [solid state electron. 2004;48: 335-8]",
abstract = "The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.",
author = "Meng Tao and J. Zhu",
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issn = "0038-1101",
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AU - Zhu, J.

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AB - The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.

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