Response to "comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'" [solid state electron. 2004;48:335-8]

M. Tao, J. Zhu

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.

Original languageEnglish (US)
Pages (from-to)2351-2352
Number of pages2
JournalSolid-State Electronics
Volume48
Issue number12
DOIs
StatePublished - Dec 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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