Response functions in submicrometre n+nn+ diode generators

V. Gruzinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti, L. Varani

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A closed hydrodynamic approach based on the system of conservation equations for carrier number, drift velocity and mean energy coupled with the Poisson equation is used to calculate the response functions in the time domain of the local electric field and applied voltage for a near-micrometre n +nn+ InP diode. By Fourier analysis, the generation bands in the frequency domain are then obtained. The good agreement achieved with available experiments validates the present theoretical approach. A significant increase of the cut-off frequency of the microwave power generation up to 600-700 GHz is predicted for submicrometre GaAs and InP diodes.

Original languageEnglish (US)
Article number044
Pages (from-to)564-566
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Gruzinskis, V., Starikov, E., Shiktorov, P., Reggiani, L., Saraniti, M., & Varani, L. (1994). Response functions in submicrometre n+nn+ diode generators. Semiconductor Science and Technology, 9(5 S), 564-566. [044]. https://doi.org/10.1088/0268-1242/9/5S/044