Response functions in submicrometre n+nn+ diode generators

V. Gruzinskis; E. Starikov; P. Shiktorov; L. Reggiani; M. Saraniti; L. Varani

doi:10.1088/0268-1242/9/5S/044

Response functions in submicrometre n⁺nn⁺ diode generators

V. Gruzinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti, L. Varani

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A closed hydrodynamic approach based on the system of conservation equations for carrier number, drift velocity and mean energy coupled with the Poisson equation is used to calculate the response functions in the time domain of the local electric field and applied voltage for a near-micrometre n ⁺nn⁺ InP diode. By Fourier analysis, the generation bands in the frequency domain are then obtained. The good agreement achieved with available experiments validates the present theoretical approach. A significant increase of the cut-off frequency of the microwave power generation up to 600-700 GHz is predicted for submicrometre GaAs and InP diodes.

Original language	English (US)
Article number	044
Pages (from-to)	564-566
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 S
DOIs	https://doi.org/10.1088/0268-1242/9/5S/044
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "A closed hydrodynamic approach based on the system of conservation equations for carrier number, drift velocity and mean energy coupled with the Poisson equation is used to calculate the response functions in the time domain of the local electric field and applied voltage for a near-micrometre n +nn+ InP diode. By Fourier analysis, the generation bands in the frequency domain are then obtained. The good agreement achieved with available experiments validates the present theoretical approach. A significant increase of the cut-off frequency of the microwave power generation up to 600-700 GHz is predicted for submicrometre GaAs and InP diodes.",

author = "V. Gruzinskis and E. Starikov and P. Shiktorov and L. Reggiani and M. Saraniti and L. Varani",

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AU - Gruzinskis, V.

AU - Starikov, E.

AU - Shiktorov, P.

AU - Reggiani, L.

AU - Saraniti, M.

AU - Varani, L.

PY - 1994

Y1 - 1994

N2 - A closed hydrodynamic approach based on the system of conservation equations for carrier number, drift velocity and mean energy coupled with the Poisson equation is used to calculate the response functions in the time domain of the local electric field and applied voltage for a near-micrometre n +nn+ InP diode. By Fourier analysis, the generation bands in the frequency domain are then obtained. The good agreement achieved with available experiments validates the present theoretical approach. A significant increase of the cut-off frequency of the microwave power generation up to 600-700 GHz is predicted for submicrometre GaAs and InP diodes.

AB - A closed hydrodynamic approach based on the system of conservation equations for carrier number, drift velocity and mean energy coupled with the Poisson equation is used to calculate the response functions in the time domain of the local electric field and applied voltage for a near-micrometre n +nn+ InP diode. By Fourier analysis, the generation bands in the frequency domain are then obtained. The good agreement achieved with available experiments validates the present theoretical approach. A significant increase of the cut-off frequency of the microwave power generation up to 600-700 GHz is predicted for submicrometre GaAs and InP diodes.

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Response functions in submicrometre n⁺nn⁺ diode generators

Abstract

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