Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices

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2 Citations (Scopus)

Abstract

The "smooth" quantum hydrodynamic (QHD) model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode exhibit negative differential resistance - the experimental signal for quantum resonance effects. Resonant tunneling is analyzed in fluid dynamical terms from the point of view of the smooth QHD transport equations.

Original languageEnglish (US)
Pages (from-to)563-570
Number of pages8
JournalTransport Theory and Statistical Physics
Volume29
Issue number3-5
StatePublished - 2000

Fingerprint

Quantum Hydrodynamics
Resonant tunneling
Hydrodynamic Model
Semiconductor Devices
resonant tunneling
Semiconductor devices
semiconductor devices
Hydrodynamics
hydrodynamics
simulation model
Heterojunction
Hydrodynamic Equations
Resonant tunneling diodes
energy
Transport Equation
Diode
resonant tunneling diodes
Discontinuity
Potential energy
Heterojunctions

ASJC Scopus subject areas

  • Applied Mathematics
  • Mathematical Physics
  • Physics and Astronomy(all)
  • Statistical and Nonlinear Physics

Cite this

@article{813421dc019a4fafb3f6f7bee79a0573,
title = "Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices",
abstract = "The {"}smooth{"} quantum hydrodynamic (QHD) model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode exhibit negative differential resistance - the experimental signal for quantum resonance effects. Resonant tunneling is analyzed in fluid dynamical terms from the point of view of the smooth QHD transport equations.",
author = "Carl Gardner and Christian Ringhofer",
year = "2000",
language = "English (US)",
volume = "29",
pages = "563--570",
journal = "Journal of Computational and Theoretical Transport",
issn = "2332-4309",
publisher = "Taylor and Francis Ltd.",
number = "3-5",

}

TY - JOUR

T1 - Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices

AU - Gardner, Carl

AU - Ringhofer, Christian

PY - 2000

Y1 - 2000

N2 - The "smooth" quantum hydrodynamic (QHD) model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode exhibit negative differential resistance - the experimental signal for quantum resonance effects. Resonant tunneling is analyzed in fluid dynamical terms from the point of view of the smooth QHD transport equations.

AB - The "smooth" quantum hydrodynamic (QHD) model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode exhibit negative differential resistance - the experimental signal for quantum resonance effects. Resonant tunneling is analyzed in fluid dynamical terms from the point of view of the smooth QHD transport equations.

UR - http://www.scopus.com/inward/record.url?scp=0034418424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034418424&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034418424

VL - 29

SP - 563

EP - 570

JO - Journal of Computational and Theoretical Transport

JF - Journal of Computational and Theoretical Transport

SN - 2332-4309

IS - 3-5

ER -