Resonant Tunneling in the Quantum Hydrodynamic Model

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR. Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore on the phases of the wavefunctions. An analysis of the QHD equations using a moment expansion of the Wigner-Boltzmann equation indicates how phase information is retained in the hydrodynamic equations.

Original languageEnglish (US)
Pages (from-to)201-210
Number of pages10
JournalVLSI Design
Volume3
Issue number2
DOIs
StatePublished - Jan 1 1995

Keywords

  • quantum hydrodynamic model
  • resonant tunneling diode

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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