Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics

C. L. Hinkle, C. Fulton, Robert Nemanich, G. Lucovsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages80-85
Number of pages6
ISBN (Print)4891140372, 9784891140373
DOIs
StatePublished - 2003
Externally publishedYes
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: Nov 6 2003Nov 7 2003

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period11/6/0311/7/03

Keywords

  • Annealing
  • Artificial intelligence
  • Capacitance-voltage characteristics
  • Dielectric constant
  • Dielectric substrates
  • Electrons
  • High K dielectric materials
  • High-K gate dielectrics
  • Plasmas
  • Resonant tunneling devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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