Abstract
We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.
Original language | English (US) |
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Title of host publication | Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 80-85 |
Number of pages | 6 |
ISBN (Print) | 4891140372, 9784891140373 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
Event | International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan Duration: Nov 6 2003 → Nov 7 2003 |
Other
Other | International Workshop on Gate Insulator, IWGI 2003 |
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Country/Territory | Japan |
City | Tokyo |
Period | 11/6/03 → 11/7/03 |
Keywords
- Annealing
- Artificial intelligence
- Capacitance-voltage characteristics
- Dielectric constant
- Dielectric substrates
- Electrons
- High K dielectric materials
- High-K gate dielectrics
- Plasmas
- Resonant tunneling devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering