Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics

C. L. Hinkle, C. Fulton, Robert Nemanich, G. Lucovsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages80-85
Number of pages6
ISBN (Print)4891140372, 9784891140373
DOIs
StatePublished - 2003
Externally publishedYes
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: Nov 6 2003Nov 7 2003

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period11/6/0311/7/03

Fingerprint

Resonant tunneling
Electron tunneling
Gate dielectrics
Conduction bands

Keywords

  • Annealing
  • Artificial intelligence
  • Capacitance-voltage characteristics
  • Dielectric constant
  • Dielectric substrates
  • Electrons
  • High K dielectric materials
  • High-K gate dielectrics
  • Plasmas
  • Resonant tunneling devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hinkle, C. L., Fulton, C., Nemanich, R., & Lucovsky, G. (2003). Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 80-85). [1252514] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159189

Resonant tunneling in stacked dielectrics : A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics. / Hinkle, C. L.; Fulton, C.; Nemanich, Robert; Lucovsky, G.

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 80-85 1252514.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hinkle, CL, Fulton, C, Nemanich, R & Lucovsky, G 2003, Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252514, Institute of Electrical and Electronics Engineers Inc., pp. 80-85, International Workshop on Gate Insulator, IWGI 2003, Tokyo, Japan, 11/6/03. https://doi.org/10.1109/IWGI.2003.159189
Hinkle CL, Fulton C, Nemanich R, Lucovsky G. Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 80-85. 1252514 https://doi.org/10.1109/IWGI.2003.159189
Hinkle, C. L. ; Fulton, C. ; Nemanich, Robert ; Lucovsky, G. / Resonant tunneling in stacked dielectrics : A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics. Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 80-85
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