Abstract
We report the first observations of resonant tunneling in electronic transport perpendicular to two AlAs layers separated by a GaAs quantum well in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition. Resonant tunneling can be observed as inflections in the I-V curves at room temperature. These inflections become more pronounced as the temperature is reduced, until negative differential resistance regions become visible for temperatures below 260 K. At low temperatures, the I-V curves not only reveal two large negative resistance regions corresponding to the first energy level in the GaAs quantum well but also a structure which shows evidence of resonant tunneling through the second and possibly the third energy states in the well. Second derivative (d2I/dV2) measurements confirm the existence of the resonances seen in the I-V curves.
Original language | English (US) |
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Pages (from-to) | 285-287 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 46 |
Issue number | 3 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)