Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition

A. R. Bonnefoi, R. T. Collins, T. C. McGill, R. D. Burnham, F. A. Ponce

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

We report the first observations of resonant tunneling in electronic transport perpendicular to two AlAs layers separated by a GaAs quantum well in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition. Resonant tunneling can be observed as inflections in the I-V curves at room temperature. These inflections become more pronounced as the temperature is reduced, until negative differential resistance regions become visible for temperatures below 260 K. At low temperatures, the I-V curves not only reveal two large negative resistance regions corresponding to the first energy level in the GaAs quantum well but also a structure which shows evidence of resonant tunneling through the second and possibly the third energy states in the well. Second derivative (d2I/dV2) measurements confirm the existence of the resonances seen in the I-V curves.

Original languageEnglish (US)
Pages (from-to)285-287
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number3
DOIs
StatePublished - Dec 1 1985

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this