Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors

M. J. Gilbert, D. K. Ferry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The narrow ultrasonic ballistic transport in a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated. The discrete dopant effects and electron tunneling behavior of the MOSFET devices were also studied. Simulation studies were carried out by including atomistic nature of the small devices. Variations in the threshold voltage was observed, which was dependent on the position of the dopants in the channel. The narrow channel access geometry was found to create a situation in which the impinging electron density in the source undergoes resonant tunneling in order to reach the drain end of the device.

Original languageEnglish (US)
Pages (from-to)2039-2044
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 2004

Fingerprint

Resonant tunneling
MOSFET devices
resonant tunneling
Ballistics
metal oxide semiconductors
ballistics
field effect transistors
Doping (additives)
insulators
Silicon
Electron tunneling
silicon
Threshold voltage
Carrier concentration
Ultrasonics
electron tunneling
threshold voltage
Geometry
ultrasonics
geometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

@article{c256a2884b594b7cb9bb86ea4b7530b4,
title = "Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors",
abstract = "The narrow ultrasonic ballistic transport in a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated. The discrete dopant effects and electron tunneling behavior of the MOSFET devices were also studied. Simulation studies were carried out by including atomistic nature of the small devices. Variations in the threshold voltage was observed, which was dependent on the position of the dopants in the channel. The narrow channel access geometry was found to create a situation in which the impinging electron density in the source undergoes resonant tunneling in order to reach the drain end of the device.",
author = "Gilbert, {M. J.} and Ferry, {D. K.}",
year = "2004",
month = "7",
doi = "10.1116/1.1775195",
language = "English (US)",
volume = "22",
pages = "2039--2044",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors

AU - Gilbert, M. J.

AU - Ferry, D. K.

PY - 2004/7

Y1 - 2004/7

N2 - The narrow ultrasonic ballistic transport in a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated. The discrete dopant effects and electron tunneling behavior of the MOSFET devices were also studied. Simulation studies were carried out by including atomistic nature of the small devices. Variations in the threshold voltage was observed, which was dependent on the position of the dopants in the channel. The narrow channel access geometry was found to create a situation in which the impinging electron density in the source undergoes resonant tunneling in order to reach the drain end of the device.

AB - The narrow ultrasonic ballistic transport in a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated. The discrete dopant effects and electron tunneling behavior of the MOSFET devices were also studied. Simulation studies were carried out by including atomistic nature of the small devices. Variations in the threshold voltage was observed, which was dependent on the position of the dopants in the channel. The narrow channel access geometry was found to create a situation in which the impinging electron density in the source undergoes resonant tunneling in order to reach the drain end of the device.

UR - http://www.scopus.com/inward/record.url?scp=4944224597&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944224597&partnerID=8YFLogxK

U2 - 10.1116/1.1775195

DO - 10.1116/1.1775195

M3 - Article

AN - SCOPUS:4944224597

VL - 22

SP - 2039

EP - 2044

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -